Single Silicon Switching Diode
LESHAN RADIO COMPANY, LTD.
Single Silicon Switching Diode
This Silicon Epitaxial Planar Diode is designed for use in u...
Description
LESHAN RADIO COMPANY, LTD.
Single Silicon Switching Diode
This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
LM1MA141KT1G S-LM1MA141KT1G LM1MA142KT1G
z Fast trr, < 3.0 ns z Low Crr , < 2.0 pF z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
S-LM1MA142KT1G
SC–70/SOT–323 PACKAGE SINGLE SILICON
SWITCHING DIODE 40/80 V–100 mA
SURFACE MOUNT
Device
Package
Shipping
3
LM1MA141KT1G LM1MA141KT3G
SOT-323/SC-70 SOT-323/SC-70
3000/Tape&Reel 10000/Tape&Reel
1 2
LM1MA142KT1G
SOT-323/SC-70
3000/Tape&Reel
SC – 70
LM1MA142KT3G
SOT-323/SC-70
10000/Tape&Reel
DEVICE MARKING
LM1MA141KT1G = MH LM1MA142KT1G=MI
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Reverse Voltage
LM1MA141KT1G LM1MA142KT1G
VR
Peak Reverse Voltage LM1MA141KT1G LM1MA142KT1G
VRM
Forward Current
IF
Peak Forward Current Peak Forward Surge Current
IFM I (1)
FSM
Value 40 80 40 80 100 225 500
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Power Dissipation Junction Temperature Storage Temperature
PD 150 TJ 150 Tstg –55 ~ +150
ELECTRICAL CHARACTERISTICS (TA= 25°C)
Characteristic
Symbol
Reverse Voltage Leakage Current LM1MA141KT1G LM1MA142KT1...
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