LM1MA141WKT1G

LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications. z Fast t, rr < 3.0 ns z Low C, D < 2.0 pF z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LM1MA141WKT1G S-LM1MA141WKT1G LM1MA142WKT1G S-LM1MA142WKT1G SC–70/SOT–323 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE 40/80 V–100 mA SURFACE MOUNT MAXIMUM RATINGS (TA = 25°C) Rating Symbol Reverse Voltage LM1MA141WKT1G VR LM1MA142WKT1G Peak Reverse Voltage LM1MA141WKT1G VRM LM1MA142WKT1 G Forward Current Single IF Dual Peak Forward Current Single IFM Dual Peak Forward Surge Current Single I (1) FSM Dual Value 40 80 40 80 100 150 225 340 500 750 Unit Vdc Vdc mAdc mAdc mAdc 3 1 2 SC – 70 CATHODE 3 1 ANODE 2 THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 150 150 –55 ~ +150 Unit mW °C °C Marking Symbol Type No.141WK142WK Symbol MT MU MTX The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. ELECTRICAL CHARACTERISTICS (T = 25°C) A Characteristic...