LBAL99LT1G

LESHAN RADIO COMPANY, LTD. Switching Diode Featrues We declare that the material of product compliance with RoHS requirements. Ordering Information Device LBAL99LT1G LBAL99LT3G Marking JF JF Shipping 3000/Tape&Reel 10000/Tape&Reel MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current DEVICE MARKING Symbol VR IF Value 70 100 Unit Vdc mAdc LBAL99LT1G = JF THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA PD R θJA T J , T stg Max 225 1.8 556 300 2.4 417 –55 to +150 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Reverse Voltage Leakage Current (V R = 70 Vdc) (V R = 25 Vdc, T J = 150°C) (V R = 70 Vdc, T J = 150°C) Reverse Breakdown Voltage (I R = 100 µAdc) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Recovery Current (I F = 10 mAdc, V R = 5.0 Vdc, R L = 500 Ω) Diode Capacitance (V R = 0, f = 1.0 MHz) Reverse Recovery Time (I F = I R = 10 mAdc, R L = 100 Ω, measured at I R = 1.0 mAdc) Forward Recovery Voltage (I F = 10 mAdc, t r = 20 ns) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol IR V (BR) VF QS CD t rr V FR Min — — — 70 — — — — — — — — LBAL99LT1G 3 1 2...