LBAS21LT3G

LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G S-LBAS21LT1G FEATURE We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS21LT1G S-LBAS21LT1G JS 3000/Tape&Reel LBAS21LT3G JS 10000/Tape&Reel S-LBAS21LT3G 3 1 2 SOT– 23 3 CATHODE 1 ANODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF I FM(surge) Value 250 225 625 Unit Vdc mAdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RθJA PD RθJA TJ , Tstg Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 mW/°C 417 –55 to +150 °C/W °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Reverse Voltage Leakage Current (V R = 200Vdc) (V R = 200Vdc, T J = 150°C) Reverse Breakdown Voltage (I BR = 100 µAdc) Forward Voltage (I F = 100 mAdc) (I F = 200 mAdc) Diode Capacitance (V R = 0, f = 1.0 MHz) Reverse Recovery Time (I F = I R = 30mAdc, R L = 100 Ω) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x ...