LBAV70LT3G

LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Cathode ●FEATURES 1)We declare that the material of product compliant with RoHS requirements and Halogen Free. 2)S- Prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. ●DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAV70LT1G A4 3000/Tape&Reel LBAV70LT3G A4 10000/Tape&Reel LBAV70LT1G S-LBAV70LT1G 3 1 2 SOT-23 ●MAXIMUM RATINGS(Ta = 25℃) Parameter Symbol Reverse Voltage VR Forward Current IF Peak Forward Surge Current IFM(surge) Limits 70 200 500 Unit Vdc mAdc mAdc 3 CATHODE 1 ANODE 2 ANODE ●THERMAL CHARACTERISTICS Parameter Symbol Total Device Dissipation FR–5 Board(Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate(Note 2) T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Rθ JA PD Rθ JA T J , T stg Max. 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ●ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Reverse Breakdown Voltage(I(BR)=100uA) V(BR) Min 70 Max. — Reverse Voltage Leakage Current IR (VR = 25 Vdc, TJ = 150°C) — 60 (VR = 70 Vdc) — 2.5 (VR = 70 Vdc, TJ = 150°C) — 100 Diode Capacitance (VR = 0, f = 1.0 MHz) CD — 1.5 Forward Voltage (IF = 1.0 mAdc) VF — 715 (IF = 10 mAdc) — 855 ...