LBAV74LT1G

LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Featrues z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBAV74LT1G S-LBAV74LT1G 3 1 2 SOT–23 ORDERING INFORMATION Device Marking LBAV74LT1G S-LBAV74LT1G JA LBAV74LT3G S-LBAV74LT3G JA Shipping 3000/Tape&Reel 10000/Tape&Reel 3 CATHODE 1 ANODE 2 ANODE MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol VR IF I FM(surge) Symbol PD R θJA PD R θJA T J , T stg Value 50 200 500 Max 225 1.8 556 300 2.4 417 –55 to +150 Unit Vdc mAdc mAdc Unit mW mW/°C °C/W mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) ( EACH DIODE ) Characteristic Symbol OFF CHARACTERISTICS Reverse Breakdown Voltage (I (BR) = 5.0 µAdc) V (BR) Reverse Voltage Leakage Current IR (V R = 50 Vdc, T J = 125°C) (V R = 50Vdc) Diode Capacitance (V R = 0, f = 1.0 MHz) CD Forward Voltage VF (I F = 100 mAdc) Reverse Recovery Time t rr (I F=IR=10mAdc, IR(REC)=1.0mAdc, measured at IR= 1.0 mA, RL=1...