LBAW56LT1G

LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode FEATURES We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBAW56LT1G S-LBAW56LT1G 3 ORDERING INFORMATION Device MARKING Shipping LBAW56LT1G S-LBAW56LT1G A1 3000 Tape & Reel LBAW56LT3G A1 10000 Tape & Reel S-LBAW56LT3G 1 2 SOT– 23 (TO–236AB) MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS Symbol VR IF I FM(surge) Value 70 200 500 Unit Vdc mAdc mAdc 3 ANODE Characteristic Total Device Dissipation FR- 5 Board (1) T A = 25 °C erate above 25 °C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25 °C Derate above 25 °C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 Unit mW 1.8 mW /°C R θJA 556 °C/W P D 300 mW R θJA T J , T stg 2.4 mW /°C 417 °C/W -55 to +150 °C ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min OFF CHARACTERISTICS Reverse Breakdown Voltage (I (BR) = 100 µAdc) Reverse Voltage Leakage Current (V R = 25 Vdc, T J = 150 °C) (V R = 70 Vdc) (V R = 70 Vdc, T J = 150 °C) Diode Capacitance (V R = 0, f = 1.0 MHz) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Rev...