Document
LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
Common Anode
FEATURES
• We declare that the material of product compliance with RoHS
requirements.
• S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBAW56LT1G S-LBAW56LT1G
3
ORDERING INFORMATION
Device MARKING
Shipping
LBAW56LT1G S-LBAW56LT1G
A1
3000 Tape & Reel
LBAW56LT3G
A1 10000 Tape & Reel
S-LBAW56LT3G
1 2
SOT– 23 (TO–236AB)
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS
Symbol VR IF
I FM(surge)
Value 70 200 500
Unit Vdc mAdc mAdc
3 ANODE
Characteristic Total Device Dissipation FR- 5 Board (1) T A = 25 °C erate above 25 °C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25 °C Derate above 25 °C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
Max 225
Unit mW
1.8 mW /°C
R θJA
556 °C/W
P D 300 mW
R θJA T J , T stg
2.4 mW /°C 417 °C/W -55 to +150 °C
ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I (BR) = 100 µAdc) Reverse Voltage Leakage Current (V R = 25 Vdc, T J = 150 °C) (V R = 70 Vdc) (V R = 70 Vdc, T J = 150 °C) Diode Capacitance (V R = 0, f = 1.0 MHz) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) (Figure 1) R L = 100Ω 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR) IR
CD VF
t rr
70
– – – –
– – – – –
Max
–
30 2.5 50 2.0
715 855 1000 1250 6.0
1 CATHODE 2 CATHODE
Unit Vdc µAdc pF mVdc
ns
Rev.O 1/3
LESHAN RADIO COMPANY, LTD. LBAW56LT1G,S-LBAW56LT1G
+10 V
820 Ω
2k 100 µH 0.1 µF
IF
0.1 µF
tr tp 10%
t
IF
trr t
50 Ω OUTPUT PULSE
GENERATOR
DUT
50 Ω INPUT
90%
SAMPLING
OSCILLOSCOPE
VR
INPUT SIGNAL
iR(REC) = 1.0 mA IR
OUTPUT PULSE
(IF = IR = 10 mA; measured at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
I F , FORWARD CURRENT (mA) C D ,DIODE CAPACITANCE (pF)
I R , REVERSE CURRENT (µA)
100
10
1.0
0.1 0.2
CURVES APPLICABLE TO EACH CATHODE
T A = 85°C
T A = – 40°C T A = 25°C
0.4 0.6 0.8
1.0
V F , FORWARD VOLTAGE (VOLTS) Figure 2. Forward Voltage
1.75
1.2
10
1.0
0.1
0.01
0.001 0
T A = 150°C T A = 125°C
T = 85°C A
T A = 55°C
T A = 25°C
10 20 30 40
V R , REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current
50
1.5
1.25
1.0
0.75 0
24 6
V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance
8
Rev.O 2/3
LESHAN RADIO COMPANY, LTD. LBAW56LT1G,S-LBAW56LT1G
Dimension Outline:
A L
3 BS
12
VG
C
D
H K
SOT-23
J
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
Soldering Footprint:
0.037 0.95
0.037 0.95
0.035 0.9
0.079 2.0
0.031 0.8
inches mm
Rev.O 3/3
.