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LBAW56LT3G Dataheets PDF



Part Number LBAW56LT3G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Monolithic Dual Switching Diode
Datasheet LBAW56LT3G DatasheetLBAW56LT3G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode FEATURES • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBAW56LT1G S-LBAW56LT1G 3 ORDERING INFORMATION Device MARKING Shipping LBAW56LT1G S-LBAW56LT1G A1 3000 Tape & Reel LBAW56LT3G A1 10000 Tape & Reel S-LBAW56LT3G 1 2 SOT– 23 (TO–236AB) MAX.

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LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode FEATURES • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBAW56LT1G S-LBAW56LT1G 3 ORDERING INFORMATION Device MARKING Shipping LBAW56LT1G S-LBAW56LT1G A1 3000 Tape & Reel LBAW56LT3G A1 10000 Tape & Reel S-LBAW56LT3G 1 2 SOT– 23 (TO–236AB) MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS Symbol VR IF I FM(surge) Value 70 200 500 Unit Vdc mAdc mAdc 3 ANODE Characteristic Total Device Dissipation FR- 5 Board (1) T A = 25 °C erate above 25 °C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25 °C Derate above 25 °C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 Unit mW 1.8 mW /°C R θJA 556 °C/W P D 300 mW R θJA T J , T stg 2.4 mW /°C 417 °C/W -55 to +150 °C ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min OFF CHARACTERISTICS Reverse Breakdown Voltage (I (BR) = 100 µAdc) Reverse Voltage Leakage Current (V R = 25 Vdc, T J = 150 °C) (V R = 70 Vdc) (V R = 70 Vdc, T J = 150 °C) Diode Capacitance (V R = 0, f = 1.0 MHz) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) (Figure 1) R L = 100Ω 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR) IR CD VF t rr 70 – – – – – – – – – Max – 30 2.5 50 2.0 715 855 1000 1250 6.0 1 CATHODE 2 CATHODE Unit Vdc µAdc pF mVdc ns Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LBAW56LT1G,S-LBAW56LT1G +10 V 820 Ω 2k 100 µH 0.1 µF IF 0.1 µF tr tp 10% t IF trr t 50 Ω OUTPUT PULSE GENERATOR DUT 50 Ω INPUT 90% SAMPLING OSCILLOSCOPE VR INPUT SIGNAL iR(REC) = 1.0 mA IR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit I F , FORWARD CURRENT (mA) C D ,DIODE CAPACITANCE (pF) I R , REVERSE CURRENT (µA) 100 10 1.0 0.1 0.2 CURVES APPLICABLE TO EACH CATHODE T A = 85°C T A = – 40°C T A = 25°C 0.4 0.6 0.8 1.0 V F , FORWARD VOLTAGE (VOLTS) Figure 2. Forward Voltage 1.75 1.2 10 1.0 0.1 0.01 0.001 0 T A = 150°C T A = 125°C T = 85°C A T A = 55°C T A = 25°C 10 20 30 40 V R , REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 50 1.5 1.25 1.0 0.75 0 24 6 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance 8 Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LBAW56LT1G,S-LBAW56LT1G Dimension Outline: A L 3 BS 12 VG C D H K SOT-23 J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 Soldering Footprint: 0.037 0.95 0.037 0.95 0.035 0.9 0.079 2.0 0.031 0.8 inches mm Rev.O 3/3 .


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