Monolithic Dual Switching Diode
LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
FEATURE
z We declare that the material of product complian...
Description
LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
FEATURE
z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS(EACH DIODE)
Rating Reverse Voltage Forward Current Peak Forward Surge Current
Symbol VR IF
I FM(surge)
Value 70 200 500
Unit Vdc mAdc mAdc
LMBD6100LT1G S-LMBD6100LT1G
3
1 2
SOT– 23
THERMALCHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C
Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
R θ JA PD
R θ JA T J , T stg
Max 225
1.8 556 300
2.4 417 –55 to +150
Unit mW
mW/°C °C/W mW
mW/°C °C/W
°C
ORDERING INFORMATION
DEVICE
LMBD6100LT1G S-LMBD6100LT1G
MARKING 5BM
LMBD6100LT3G S-LMBD6100LT3G
5BM
SHIPPING 3000/Tape & Reel
10000/Tape & Reel
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)(EACH DIODE)
Characteristic
Symbol
Min
OFFCHARACTERISTICS
Reverse Breakdown Voltage (I (BR) = 100 µAdc)
V (BR)
70
Reverse Voltage Leakage Current (V R = 50 Vdc) Forward Voltage (I F = 1.0 mAdc) (I F = 100 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc,IR(REC)=1.0mAdc) (Figure 1) Capacitance(VR=0V) 1. FR–5 = 1.0 x 0.75 x 0.062 in.
IR —
VF 0.55 0.80
t rr —
C—
2. Alu...
Similar Datasheet