LMBD6100LT3G

LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode FEATURE z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS(EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF I FM(surge) Value 70 200 500 Unit Vdc mAdc mAdc LMBD6100LT1G S-LMBD6100LT1G 3 1 2 SOT– 23 THERMALCHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θ JA PD R θ JA T J , T stg Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ORDERING INFORMATION DEVICE LMBD6100LT1G S-LMBD6100LT1G MARKING 5BM LMBD6100LT3G S-LMBD6100LT3G 5BM SHIPPING 3000/Tape & Reel 10000/Tape & Reel ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)(EACH DIODE) Characteristic Symbol Min OFFCHARACTERISTICS Reverse Breakdown Voltage (I (BR) = 100 µAdc) V (BR) 70 Reverse Voltage Leakage Current (V R = 50 Vdc) Forward Voltage (I F = 1.0 mAdc) (I F = 100 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc,IR(REC)=1.0mAdc) (Figure 1) Capacitance(VR=0V) 1. FR–5 = 1.0 x 0.75 x 0.062 in. IR — VF 0.55 0.80 t rr — C— 2. Alu...