LMDL914T1G

LESHAN RADIO COMPANY, LTD. High –Speed Switching Diode ●FEATURES 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LMDL914T1G S-LMDL914T1G 1 ●DEVICE MARKING Device LMDL914T1G LMDL914T3G Marking 5D 5D Shipping 3000/Tape&Reel 10000/Tape&Reel ●MAXIMUM RATINGS(Ta = 25℃) Parameter Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Limits 100 200 500 2 SOD- 323 1 CATHODE 2 ANODE Unit Vdc mAdc mAdc ●THERMAL CHARACTERISTICS Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction–to–Ambient(Note 1) Junction and Storage temperature 1. FR–5 = 1.0×0.75×0.062 in. PD RΘJA 200 mW 1.57 mW/℃ 635 ℃/W TJ,Tstg −55∼+150 ℃ June,2015 Rev.A 1/4 LESHAN RADIO COMPANY, LTD. LMDL914T1G,S-LMDL914T1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) Characteristic Symbol Reverse Breakdown Voltage (IR = 100μAdc) VBR Reverse Voltage Leakage Current IR (VR = 20Vdc) (VR = 75 Vdc) Diode Capacitance CT (VR = 0, f = 1.0 MHz) Forward Voltage VF (IF = 10 mAdc) Reverse Recovery Time trr (IF = IR = 10 mAdc) (Figure 1) Min. 100 – – – – Typ. – – – – – Max. – 25 5 4 1 4 Unit V nA μA pF V ns +10 V 820 Ω 2k 100 µH 0.1 µF IF 0.1 µF tr tp 10% t IF trr t 50 Ω OUTPUT PULSE GENERATOR DUT 50 Ω INPUT 90% SAMPLING OSCILLOS...