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FS30VSJ-3 Dataheets PDF



Part Number FS30VSJ-3
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description Nch POWER MOSFET
Datasheet FS30VSJ-3 DatasheetFS30VSJ-3 Datasheet (PDF)

MITSUBISHI Nch POWER MOSFET FS30KMH-2 HIGH-SPEED SWITCHING USE FS30KMH-2 OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 f 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 3 ± 0.3 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 1 2 3 w ¡2.5V DRIVE ¡VDSS 100V ¡rDS (ON) (MAX) .. 93m Ω ¡ID .....

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MITSUBISHI Nch POWER MOSFET FS30KMH-2 HIGH-SPEED SWITCHING USE FS30KMH-2 OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 f 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 3 ± 0.3 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 1 2 3 w ¡2.5V DRIVE ¡VDSS ................................................................................ 100V ¡rDS (ON) (MAX) .............................................................. 93m Ω ¡ID ......................................................................................... 30A ¡Integrated Fast Recovery Diode (TYP.) ............. 95ns ¡Viso ................................................................................ 2000V 2.6 ± 0.2 q q GATE w DRAIN e SOURCE e TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 100µH VGS = 0V VDS = 0V Conditions Ratings 100 ±10 30 120 30 30 120 25 –55 ~ +150 4.5 ± 0.2 Unit V V A A A A A W °C °C V g Feb.1999 AC for 1minute, Terminal to case Typical value –55 ~ +150 2000 2.0 MITSUBISHI Nch POWER MOSFET FS30KMH-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ± 10V, VDS = 0V VDS = 100V, VGS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 4V ID = 15A, VGS = 2.5V ID = 15A, VGS = 4V ID = 15A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 100 — — 0.6 — — — — — — — — — — — — — — Typ. — — — 0.9 66 69 0.99 31 2000 230 120 33 135 170 170 1.0 — 95 Max. — ± 0.1 0.1 1.2 93 97 1.40 — — — — — — — — 1.5 5.00 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 50V, ID = 15A, VGS = 4V, RGEN = RGS = 50Ω IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = –100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 101 7 5 3 2 7 5 3 100ms 1ms TC = 25°C Single Pulse DC 10ms 40 30 tw = 10ms 20 10 100 0 0 50 100 150 200 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) CASE TE.


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