Document
MITSUBISHI Nch POWER MOSFET
FS30KMH-2
HIGH-SPEED SWITCHING USE
FS30KMH-2
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
f 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
6.5 ± 0.3
3 ± 0.3
E
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
1 2 3
w
¡2.5V DRIVE ¡VDSS ................................................................................ 100V ¡rDS (ON) (MAX) .............................................................. 93m Ω ¡ID ......................................................................................... 30A ¡Integrated Fast Recovery Diode (TYP.) ............. 95ns ¡Viso ................................................................................ 2000V
2.6 ± 0.2
q
q GATE w DRAIN e SOURCE
e
TO-220FN
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg Viso —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 100µH VGS = 0V VDS = 0V
Conditions
Ratings 100 ±10 30 120 30 30 120 25 –55 ~ +150
4.5 ± 0.2
Unit V V A A A A A W °C °C V g
Feb.1999
AC for 1minute, Terminal to case Typical value
–55 ~ +150 2000 2.0
MITSUBISHI Nch POWER MOSFET
FS30KMH-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter
(Tch = 25° C)
Test conditions ID = 1mA, VGS = 0V VGS = ± 10V, VDS = 0V VDS = 100V, VGS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 4V ID = 15A, VGS = 2.5V ID = 15A, VGS = 4V ID = 15A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 100 — — 0.6 — — — — — — — — — — — — — — Typ. — — — 0.9 66 69 0.99 31 2000 230 120 33 135 170 170 1.0 — 95 Max. — ± 0.1 0.1 1.2 93 97 1.40 — — — — — — — — 1.5 5.00 —
Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns
Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 50V, ID = 15A, VGS = 4V, RGEN = RGS = 50Ω
IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 101 7 5 3 2 7 5 3
100ms 1ms TC = 25°C Single Pulse DC 10ms
40
30
tw = 10ms
20
10
100
0
0
50
100
150
200
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL)
CASE TE.