DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4069
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION The 2SK4069 is N-channel MO...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK4069
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION The 2SK4069 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES Low on-state resistance
RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 15 A) Low QGD: QGD = 3.2 nC TYP. 4.5 V drive available
ORDERING INFORMATION
PART NUMBER 2SK4069(1)-S27-AY Note 2SK4069-ZK-E1-AY Note 2SK4069-ZK-E2-AY Note
PACKAGE TO-251 (MP-3-b) TO-252 (MP-3ZK) TO-252 (MP-3ZK)
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
25
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC) ID(pulse)
±30 ±120
Total Power Dissipation (TC = 25°C)
PT1 21
Total Power Dissipation
PT2 1.0
Channel Temperature
Tch 150
Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2
Tstg −55 to +150 IAS 18 EAS 32.4
V V A A W W °C °C A mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 12 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
(TO-251) (TO-252)
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