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MDS200 Dataheets PDF



Part Number MDS200
Manufacturers TSDQ
Logo TSDQ
Description Three Phases Rectification Bridge Modules
Datasheet MDS200 DatasheetMDS200 Datasheet (PDF)

T!SDQ R Features:  Isolated mounting base 2500V~  Pressure contact technology with Increased power cycling capability  Space and weight savings Typical Applications  Inverter  Inductive heating  Chopper 125 SYMBOL CHARACTERISTIC IO DC output current VRRM Repetitive peak reverse voltage IRRM IFSM I2t VFO rF VFM Rth(j-c) Rth(c-h) Viso Fm Tstg Wt Outline Repetitive peak current Surge forward current I2T for fusing coordination Threshold voltage Forward slop resistance Peak forward vol.

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T!SDQ R Features:  Isolated mounting base 2500V~  Pressure contact technology with Increased power cycling capability  Space and weight savings Typical Applications  Inverter  Inductive heating  Chopper 125 SYMBOL CHARACTERISTIC IO DC output current VRRM Repetitive peak reverse voltage IRRM IFSM I2t VFO rF VFM Rth(j-c) Rth(c-h) Viso Fm Tstg Wt Outline Repetitive peak current Surge forward current I2T for fusing coordination Threshold voltage Forward slop resistance Peak forward voltage Thermal resistance Junction to case Thermal resistance case to heatsink Isolation voltage Terminal connection torque(M6) Mounting torque(M5) Stored temperature Weight MDS200 Three Phases Rectification Bridge Modules IO VRRM IFSM I2t 200 A 600~1800 V 1.7 A×103 14.7 A2 S*103 TEST CONDITIONS Three-phase full wave rectifying circuit, TC=100°C VRRM tp=10ms VRSM=VRRM+100V at VRRM 10ms half sine wave VR=0 IFM=200A Single side cooled Single side cooled 50Hz,R.M.S,t=1min,Iiso:1mA(max) 411H5/211H5 Tj(C) Min VALUE Type Max UNIT 150 200 A 150 600 1800 V 150 100 150 25 2500 -40 6 4 450 12 mA 1.7 14.7 0.75 2.0 1.40 KA A2s*103 V m V 0.10 C /W 0.07 C /W V N·m N·m 125 C g Total peak half-sine surge current,kA Max.forward dissipation,wates Instantaneous forward voltage,volts Peak forw ard VoltMaDgSe2V00s.Peak forw ard Current 3.5 3 Tj=150°C 2.5 2 1.5 1 0.5 10 100 1000 10000 Instantaneous forw ard currant,amperes Fig.1 Max. Pow er DissipatMioDnS2V0s0.Mean forw ard Current 500 3phase 400 300 200 100 0 0 40 80 120 160 200 Mean forw ard current,amperes Fig.3 Surge Current1V.7s.Cycles 2 1.7 1.4 1.1 0.8 0.5 0.2 1 10 Cycles at 50Hz Fig.5 100 Maximum 2It(Kamps2,secs) Case temperure,°C Transient thermal impedance,°C/W MDS200 Max. junction To case0T.h1ermai Impedance Vs.Time 0.22 0.2 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0.001 0.01 0.1 1 10 Time,seconds Fig.2 Max. case TemperaMtuDrSe20V0s.Mean forw ard Current 160 140 120 100 80 60 3phase 40 20 0 50 100 150 200 250 300 350 Mean forw ard current,amperes Fig.4 I2t 1V4.s7.T1i.m7 e 15 13 11 9 7 5 1 10 Time,m.seconds Fig.6 Outline: 411H5 MDS200 .


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