Dual N-Channel SO8FL
NTMFD4C87N
PowerPhase, Dual N-Channel SO8FL
30 V, High Side 20 A / Low Side 26 A
Features
• Co−Packaged Power Stage Solu...
Description
NTMFD4C87N
PowerPhase, Dual N-Channel SO8FL
30 V, High Side 20 A / Low Side 26 A
Features
Co−Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
DC−DC Converters System Voltage Rails Point of Load
www.onsemi.com
V(BR)DSS
Q1 Top FET 30 V
Q2 Bottom FET 30 V
RDS(ON) MAX 5.4 mW @ 10 V 8.1 mW @ 4.5 V 3.1 mW @ 10 V 4.3 mW @ 4.5 V
ID MAX 20 A
26 A
D1 (3, 4, 9)
EFFICIENCY (%)
Figure 1. Typical Application Circuit
100
95
90
85
80 VIN = 12 V VOUT = 1.2 V
75 VGS = 5 V FSW = 300 kHz
70 TA = 25°C 0 5 10 15 20 25 LOAD CURRENT (A) Figure 2. Typical Efficiency Performance POWERPHASEGEVB Evaluation Board
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 0
1
(1) G1 (2) S1
SW (5, 6, 7)
(8) G2
S2 (10)
PIN CONNECTIONS
D1 4
D1 3 9 10 D1 S2
S1 2
G1 1
5 SW 6 SW 7 SW 8 G2
(Bottom View)
MARKING DIAGRAM
1
DFN8 CASE 506CR
4C87N AYWZZ
1
4C87N = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information on page 10 of this data sheet.
Publication Order Number: NTMFD4C87N/D
NTMFD4C87N
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter
Symbol
Value
Unit
Drain−to−Source Voltage Drain−to−Source Voltage
Q1 VDSS 30 V Q2
Gate−to−Source Voltage Gate−to−Source Voltage
Q1 VGS Q2
±20 V
C...
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