Document
NTMFD4C20N
MOSFET – Power, Dual, N-Channel, SO8FL
30 V, High Side 18 A / Low Side 27 A
Features
• Co−Packaged Power Stage Solution to Minimize Board Space • Minimized Parasitic Inductances • Optimized Devices to Reduce Power Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters • System Voltage Rails • Point of Load
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V(BR)DSS
Q1 Top FET 30 V
Q2 Bottom FET 30 V
RDS(ON) MAX 7.3 mW @ 10 V 10.8 mW @ 4.5 V 3.4 mW @ 10 V 5.2 mW @ 4.5 V
ID MAX 18 A 27 A
D1 (2, 3, 4, 9)
(1) G1
S1/D2 (10)
© Semiconductor Components Industries, LLC, 2013
May, 2019− Rev. 4
(8) G2
S2 (5, 6, 7)
PIN CONNECTIONS
D1 4 D1 3 D1 2 G1 1
9 10 D1 S1/D2
(Bottom View)
5 S2 6 S2 7 S2 8 G2
MARKING DIAGRAM
1 DFN8 CASE 506BX
4C20N AYWZZ
1
4C20N = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
1
Publication Order Number:
NTMFD4C20N/D
NTMFD4C20N
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter
Symbol
Value
Unit
Drain−to−Source Voltage Drain−to−Source Voltage
Q1
VDSS
30
V
Q2
Gate−to−Source Voltage Gate−to−Source Voltage
Q1
VGS
Q2
±20
V
Continuous Drain Current RqJA (Note 1)
Power Dissipation RqJA (Note 1)
TA = 25°C
Q1
ID
TA = 85°C
TA = 25°C
Q2
TA = 85°C
TA = 25°C
Q1
PD
Q2
12
8.6 A
18
13
1.88
W
1.97
Continuous Drain Current RqJA ≤ 10 s (Note 1)
Power Dissipation RqJA ≤ 10 s (Note 1)
TA = 25°C
Q1
ID
TA = 85°C
Steady State
TA = 25°C
Q2
TA = 85°C
TA = 25°C
Q1
PD
Q2
18.2
13.1 A
27.4
19.8
4.37
W
4.6
Continuous Drain Current RqJA (Note 2)
Power Dissipation RqJA (Note 2)
TA = 25°C
Q1
ID
TA = 85°C
TA = 25°C
Q2
TA = 85°C
TA = 25 °C
Q1
PD
Q2
9.1
6.6 A
13.7
9.9
1.09
W
1.15
Pulsed Drain Current
TA = 25°C
Q1
IDM
tp = 10 ms
Q2
55
A
82
Operating Junction and Storage Temperature
Q1
TJ, TSTG
−55 to +150
°C
Q2
Source Current (Body Diode)
Q1
IS
Q2
4.0
A
4.2
Drain to Source DV/DT
dV/dt
6
V/ns
Single Pulse Drain−to−Source Avalanche Energy (TJ = 25C, VDD
IL = 18 Apk
Q1
= 50 V, VGS = 10 V, L = 0.1 mH, RG = 25 W)
IL = 29 Apk
Q2
Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
EAS EAS TL
16
mJ
42
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2.
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NTMFD4C20N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
FET Symbol
Junction−to−Ambient – Steady State (Note 3)
Q1
RqJA
Q2
Junction−to−Ambient – Steady State (Note 4)
Q1
RqJA
Q2
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
Q1
RqJA
Q2
Junction−to−Case – (Drain)
Q1
RqJC
Q2
3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
FET Symbol
Test Condition
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown
Q1
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Voltage
Q2
VGS = 0 V, ID = 1 mA
30
Drain−to−Source Breakdown
Q1
V(BR)DSS/
Voltage Temperature Coefficient Q2
TJ
Zero Gate Voltage Drain Cur-
Q1
rent
Q2
Gate−to−Source Leakage Cur-
Q1
rent Q2
IDSS IGSS
VGS = 0 V, VDS = 24 V
TJ = 25°C TJ = 125°C
VGS = 0 V, VDS = 24 V
TJ = 25°C
VDS = 0 V, VGS = ±20 V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Q1
VGS(TH)
VGS = VDS, ID = 250 mA
1.3
Q2
1.3
Negative Threshold Temperature Coefficient
Q1
VGS(TH)/
Q2
TJ
Drain−to−Source On Resistance
Forward Transconductance
Q1
RDS(on)
Q2
Q1
gFS
Q2
VGS = 10 V
ID = 10 A
VGS = 4.5 V
ID = 10 A
VGS = 10 V
ID = 20 A
VGS = 4.5 V
ID = 20 A
VDS = 1.5 V, ID = 10 A
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures.
Value 66.5 63.3 114.3 108.7 28.6 27.2 5.4 3.7
Unit °C/W
Typ
Max
Unit
V
14.5
mV/°C
12
1
mA
10
10
±100
nA
±100
2.1
V
2.1
4.7
mV/°C
5.1
5.8
7.3
8.7
10.8
mW
2.7
3.4
4.0
5.2
43
S
68
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NTMFD4C20N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
FET Symbol
Test Condition
Min
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Q1
Q2
CISS
Output Capacitance
Q1
Q2
COSS
VGS = 0 V, f = 1 MHz, VDS = 15 V
Reverse Capacitance
Q1
Q2
CRSS
Total Gate Charge
Q1
Q2
QG(TOT)
Threshold Gate Charge Gate−to−Source Charge
Q1
Q2
QG(TH)
Q1
.