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NTMFD4C20N Dataheets PDF



Part Number NTMFD4C20N
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual N-Channel Power MOSFET
Datasheet NTMFD4C20N DatasheetNTMFD4C20N Datasheet (PDF)

NTMFD4C20N MOSFET – Power, Dual, N-Channel, SO8FL 30 V, High Side 18 A / Low Side 27 A Features • Co−Packaged Power Stage Solution to Minimize Board Space • Minimized Parasitic Inductances • Optimized Devices to Reduce Power Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • DC−DC Converters • System Voltage Rails • Point of Load www.onsemi.com V(BR)DSS Q1 Top FET 30 V Q2 Bottom FET 30 V RDS(ON) MAX 7.3 mW @ 10 V 10.8 mW @ 4.5 V 3.4 mW @ 10 V 5.2 m.

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NTMFD4C20N MOSFET – Power, Dual, N-Channel, SO8FL 30 V, High Side 18 A / Low Side 27 A Features • Co−Packaged Power Stage Solution to Minimize Board Space • Minimized Parasitic Inductances • Optimized Devices to Reduce Power Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • DC−DC Converters • System Voltage Rails • Point of Load www.onsemi.com V(BR)DSS Q1 Top FET 30 V Q2 Bottom FET 30 V RDS(ON) MAX 7.3 mW @ 10 V 10.8 mW @ 4.5 V 3.4 mW @ 10 V 5.2 mW @ 4.5 V ID MAX 18 A 27 A D1 (2, 3, 4, 9) (1) G1 S1/D2 (10) © Semiconductor Components Industries, LLC, 2013 May, 2019− Rev. 4 (8) G2 S2 (5, 6, 7) PIN CONNECTIONS D1 4 D1 3 D1 2 G1 1 9 10 D1 S1/D2 (Bottom View) 5 S2 6 S2 7 S2 8 G2 MARKING DIAGRAM 1 DFN8 CASE 506BX 4C20N AYWZZ 1 4C20N = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 1 Publication Order Number: NTMFD4C20N/D NTMFD4C20N MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Drain−to−Source Voltage Q1 VDSS 30 V Q2 Gate−to−Source Voltage Gate−to−Source Voltage Q1 VGS Q2 ±20 V Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) TA = 25°C Q1 ID TA = 85°C TA = 25°C Q2 TA = 85°C TA = 25°C Q1 PD Q2 12 8.6 A 18 13 1.88 W 1.97 Continuous Drain Current RqJA ≤ 10 s (Note 1) Power Dissipation RqJA ≤ 10 s (Note 1) TA = 25°C Q1 ID TA = 85°C Steady State TA = 25°C Q2 TA = 85°C TA = 25°C Q1 PD Q2 18.2 13.1 A 27.4 19.8 4.37 W 4.6 Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) TA = 25°C Q1 ID TA = 85°C TA = 25°C Q2 TA = 85°C TA = 25 °C Q1 PD Q2 9.1 6.6 A 13.7 9.9 1.09 W 1.15 Pulsed Drain Current TA = 25°C Q1 IDM tp = 10 ms Q2 55 A 82 Operating Junction and Storage Temperature Q1 TJ, TSTG −55 to +150 °C Q2 Source Current (Body Diode) Q1 IS Q2 4.0 A 4.2 Drain to Source DV/DT dV/dt 6 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25C, VDD IL = 18 Apk Q1 = 50 V, VGS = 10 V, L = 0.1 mH, RG = 25 W) IL = 29 Apk Q2 Lead Temperature for Soldering Purposes (1/8” from case for 10 s) EAS EAS TL 16 mJ 42 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2. www.onsemi.com 2 NTMFD4C20N THERMAL RESISTANCE MAXIMUM RATINGS Parameter FET Symbol Junction−to−Ambient – Steady State (Note 3) Q1 RqJA Q2 Junction−to−Ambient – Steady State (Note 4) Q1 RqJA Q2 Junction−to−Ambient – (t ≤ 10 s) (Note 3) Q1 RqJA Q2 Junction−to−Case – (Drain) Q1 RqJC Q2 3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition Min OFF CHARACTERISTICS Drain−to−Source Breakdown Q1 V(BR)DSS VGS = 0 V, ID = 250 mA 30 Voltage Q2 VGS = 0 V, ID = 1 mA 30 Drain−to−Source Breakdown Q1 V(BR)DSS/ Voltage Temperature Coefficient Q2 TJ Zero Gate Voltage Drain Cur- Q1 rent Q2 Gate−to−Source Leakage Cur- Q1 rent Q2 IDSS IGSS VGS = 0 V, VDS = 24 V TJ = 25°C TJ = 125°C VGS = 0 V, VDS = 24 V TJ = 25°C VDS = 0 V, VGS = ±20 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Q1 VGS(TH) VGS = VDS, ID = 250 mA 1.3 Q2 1.3 Negative Threshold Temperature Coefficient Q1 VGS(TH)/ Q2 TJ Drain−to−Source On Resistance Forward Transconductance Q1 RDS(on) Q2 Q1 gFS Q2 VGS = 10 V ID = 10 A VGS = 4.5 V ID = 10 A VGS = 10 V ID = 20 A VGS = 4.5 V ID = 20 A VDS = 1.5 V, ID = 10 A 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. Value 66.5 63.3 114.3 108.7 28.6 27.2 5.4 3.7 Unit °C/W Typ Max Unit V 14.5 mV/°C 12 1 mA 10 10 ±100 nA ±100 2.1 V 2.1 4.7 mV/°C 5.1 5.8 7.3 8.7 10.8 mW 2.7 3.4 4.0 5.2 43 S 68 www.onsemi.com 3 NTMFD4C20N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition Min CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Q1 Q2 CISS Output Capacitance Q1 Q2 COSS VGS = 0 V, f = 1 MHz, VDS = 15 V Reverse Capacitance Q1 Q2 CRSS Total Gate Charge Q1 Q2 QG(TOT) Threshold Gate Charge Gate−to−Source Charge Q1 Q2 QG(TH) Q1 .


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