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NTMFS4C01N Dataheets PDF



Part Number NTMFS4C01N
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTMFS4C01N DatasheetNTMFS4C01N Datasheet (PDF)

NTMFS4C01N Power MOSFET 30 V, 0.9 mW, 303 A, Single N−Channel, SO−8FL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Notes.

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NTMFS4C01N Power MOSFET 30 V, 0.9 mW, 303 A, Single N−Channel, SO−8FL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Notes 1, 3) Steady State TC = 25°C TC = 25°C Continuous Drain Cur- rent 3) RqJA (Notes 1, 2, Power Dissipation RqJA (Notes 1, 2, 3) Steady State TA = 25°C TA = 25°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID PD ID 30 "20 303 134 47 PD 3.2 IDM TJ, Tstg 900 −55 to 150 V V A W A W A °C Source Current (Body Diode) IS 110 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 35 A) EAS 862 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 0.93 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 39 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 0.9 mW @ 10 V 1.2 mW @ 4.5 V ID MAX 303 A D (5) G (4) S (1,2,3) N−CHANNEL MOSFET 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 MARKING DIAGRAM D SD S 4C01N S AYWZZ GD D A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION Device NTMFS4C01NT1G Package SO−8FL (Pb−Free) Shipping† 1500 / Tape & Reel NTMFS4C01NT3G SO−8FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 0 1 Publication Order Number: NTMFS4C01N/D NTMFS4C01N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4) V(BR)DSS V(BR)DSS/ TJ IDSS IGSS VGS = 0 V, ID = 250 mA 30 16.3 V mV/°C VVDGSS = = 0 V, 24 V TJ = 25 °C TJ = 125°C VDS = 0 V, VGS = 20 V 1 100 mA 100 nA.


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