Document
NTMFS4C01N
Power MOSFET
30 V, 0.9 mW, 303 A, Single N−Channel, SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Notes 1, 3)
Steady State
TC = 25°C TC = 25°C
Continuous Drain Cur-
rent 3)
RqJA
(Notes
1,
2,
Power Dissipation RqJA (Notes 1, 2, 3)
Steady State
TA = 25°C TA = 25°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS VGS ID
PD
ID
30 "20 303
134
47
PD 3.2
IDM TJ, Tstg
900 −55 to
150
V V A
W
A
W
A °C
Source Current (Body Diode)
IS 110 A
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 35 A)
EAS 862 mJ
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
0.93 °C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
39
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS 30 V
RDS(ON) MAX 0.9 mW @ 10 V 1.2 mW @ 4.5 V
ID MAX 303 A
D (5)
G (4)
S (1,2,3) N−CHANNEL MOSFET
1
SO−8 FLAT LEAD CASE 488AA STYLE 1
MARKING DIAGRAM
D
SD S 4C01N S AYWZZ GD
D
A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability
ORDERING INFORMATION
Device NTMFS4C01NT1G
Package
SO−8FL (Pb−Free)
Shipping†
1500 / Tape & Reel
NTMFS4C01NT3G SO−8FL (Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 0
1
Publication Order Number: NTMFS4C01N/D
NTMFS4C01N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4)
V(BR)DSS V(BR)DSS/
TJ IDSS
IGSS
VGS = 0 V, ID = 250 mA
30 16.3
V mV/°C
VVDGSS
= =
0 V, 24 V
TJ = 25 °C TJ = 125°C
VDS = 0 V, VGS = 20 V
1 100 mA 100 nA.