NTMFS4C03N

NTMFS4C03N Power MOSFET 30 V, 2.1 mW, 136 A, Single N−Channel, SO−8FL Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Notes 1, 3) Steady State TC = 25°C TC = 25°C Continuous Drain Cur- rent 3) RqJA (Notes 1, 2, Power Dissipation RqJA (Notes 1, 2, 3) Steady State TA = 25°C TA = 25°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID PD ID 30 "20 136 64 30 PD 3.1 IDM TJ, Tstg 900 −55 to 150 V V A W A W A °C Source Current (Body Diode) IS 53 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 11 A) EAS 549 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit Junction−to−Case − Steady State (Note 2) RqJC 1.95 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 40 1. The entire application environment impacts the t...