NTMFS4C05N

NTMFS4C05N MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 78 A Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications CPU Power Delivery DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C(Nuortreen1t)RqJA TA = 25°C TA = 80°C Power Dissipation RqJA (Note 1) Continuous Drain C(Nuortreen1t)RqJA ≤ 10 s TA = 25°C TA = 25°C TA = 80°C Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain C(Nuortreen2t)RqJA Steady State TA = 25°C TA = 25°C TA = 80°C Power Dissipation RqJA (Note 2) Continuous Drain C(Nuortreen1t)RqJC TA = 25°C TC = 25°C TC =80°C Power Dissipation RqJC (Note 1) Pulsed Drain Current TC = 25°C TA = 25°C, tp = 10 ms VDSS VGS ID PD ID PD ID PD ID PD IDM 30 ±20 21.7 16.3 2.57 34.8 26.0 6.6 11.9 8.9 0.77 78 58 33 174 V V A W A W A W A W A Current Limited by Package TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 20 V, IL = 41 Apk, L = 0.1 mH, RGS = 25 W) (Note 3) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IDmax TJ, TSTG IS dV/dt EAS TL 80 −55 to +150 30 7.0 84 A °C A V/ns mJ 260 °C Stresses exceeding those ...