NTTFS4C13N

NTTFS4C13N MOSFET – Power, Single, N-Channel, m8FL 30 V, 38 A Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications CPU Power Delivery DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) VDSS 30 V VGS ±20 V TA = 25°C ID 11.7 A TA = 80°C 8.5 Power Dissipation RqJA (Note 1) TA = 25°C PD 2.06 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID TA = 80°C 15.8 A 11.4 Power Dissipation TA = 25°C PD RqJA ≤ 10 s (Note 1) Steady Continuous Drain State TA = 25°C ID Current RqJA (Note 2) TA = 80°C 3.73 W 7.2 A 5.2 Power Dissipation RqJA (Note 2) TA = 25°C PD 0.78 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID TC =80°C 38 A 27 Power Dissipation RqJC (Note 1) TC = 25°C PD 21.5 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 68 A Current Limited by Package TA = 25°C IDmax 70 A Operating Junction and Storage Temperature TJ, TSTG −55 to °C +150 Source Current (Body Diode) IS 19 A Drain to Source DV/DT dV/dt 7.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 10 V, IL = 4 Apk, L = 0.1 mH, RGS = 25 W) (Note 3) EAS 22 mJ Lead Temperature for Soldering Purposes (1/8...