Power MOSFET
NTMFS4H02N
Power MOSFET
25 V, 193 A, Single N−Channel, SO−8FL
Features
• Optimized Design to Minimize Conduction and Sw...
Description
NTMFS4H02N
Power MOSFET
25 V, 193 A, Single N−Channel, SO−8FL
Features
Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
High Performance DC-DC Converters System Voltage Rails Netcom, Telecom Servers & Point of Load
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage Gate-to-Source Voltage
Continuous Drain Current RqJA (TA = 25°C, Note 1) Power Dissipation RqJA (TA = 25°C, Note 1) Continuous Drain Current RqJC (TC = 25°C, Note 1) Power Dissipation RqJC (TC = 25°C, Note 1) Pulsed Drain Current (tp = 10 ms) Single Pulse Drain-to-Source Avalanche Energy (Note 1) (IL = 47 Apk, L = 0.3 mH) Drain to Source dV/dt
VDSS VGS ID
PD
ID
PD
IDM EAS
dV/dt
25 V ±20 V 37 A
3.13 W
193 A
83 W
412 A 331 mJ
7 V/ns
Maximum Junction Temperature Storage Temperature Range
TJ(max) TSTG
150
−55 to 150
°C °C
Lead Temperature Soldering Reflow (SMD
TSLD
260
°C
Styles Only), Pb-Free Versions (Note 2)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected. 1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness
and FR4 PCB substrate.
2. For more in...
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