Document
NTTFS4H05N
MOSFET – Power, Single, N-Channel, m8-FL
25 V, 94 A
Features
• Optimized Design to Minimize Conduction and Switching Losses • Optimized Package to Minimize Parasitic Inductances • Optimized material for improved thermal performance • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Performance DC-DC Converters • System Voltage Rails • Netcom, Telecom • Servers & Point of Load
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (TA = 25°C, Note 1) Power Dissipation RqJA (TA = 25°C, Note 1)
VDSS
25
V
VGS
±20
V
ID
22.4
A
PD
2.66
W
Continuous Drain Current RqJC (TC = 25°C, Note 1)
Power Dissipation RqJC (TC = 25°C, Note 1)
Pulsed Drain Current (tp = 10 ms)
Single Pulse Drain-to-Source Avalanche Energy (Note 1) (IL = 41 Apk, L = 0.1 mH) (Note 3)
Drain to Source dV/dt
ID
94
A
PD
46.3
W
IDM
304
A
EAS
84
mJ
dV/dt
7
V/ns
Maximum Junction Temperature Storage Temperature Range
TJ(max)
150
°C
TSTG
−55 to
°C
150
Lead Temperature Soldering Reflow (SMD
TSLD
260
°C
Styles Only), Pb-Free Versions (Note 2)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness
and FR4 PCB substrate. 2. For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D. 3. This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C,
VGS = 10 V, IL = 27 A, EAS = 36 mJ.
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VGS 4.5 V 10 V
MAX RDS(on) 4.8 mW 3.3 mW
TYP QGTOT 8.7 nC 18.9 nC
1
WDFN8 (m8FL) CASE 511AB
MARKING DIAGRAM
1
S
D
S
H05N
D
S AYWWG D
G
G
D
H05N A Y WW G
= Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS m8−FL (3.3 x 3.3 mm)
(Top View)
(Bottom View)
N−CHANNEL MOSFET D (5−8)
G (4)
S (1,2,3)
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
June, 2019 − Rev. 4
Publication Order Number: NTTFS4H05N/D
NTTFS4H05N
THERMALCHARACTERISTICS
Parameter
Symbol Max
Thermal Resistance, Junction-to-Ambient (Note 1 and 4) Junction-to-Case (Note 1 and 4)
RqJA
47
RqJC
2.7
4. Thermal Resistance RqJA and RqJC as defined in JESD51−3.
Units °C/W
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NTTFS4H05N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 5)
V(BR)DSS V(BR)DSS/
TJ IDSS
IGSS
VGS = 0 V, ID = 250 mA
25
VGS = 0 V, VDS = 20 V
TJ = 25°C TJ = 125°C
VDS = 0 V, VGS = 20 V
V
15
mV/°C
1.0 mA
20
100
nA
Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance
VGS(TH) VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES AND CAPACITANCES
VGS = VDS, ID = 250 mA
1.2
2.1
V
3.8
mV/°C
VGS = 10 V
ID = 30 A
VGS = 4.5 V
ID = 30 A
VDS = 12 V, ID = 15 A
2.5
3.3
mW
3.8
4.8
69
S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 6)
CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) RG
VGS = 0 V, f = 1 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 12 V; ID = 30 A VGS = 10 V, VDS = 12 V; ID = 30 A
TA = 25°C
1205 1812
835 1293
pF
45
81
8.7 18.6
2.7
6.0
nC
3.6
6.2
1.88 5.6
18.9
40
nC
1.0
2.0
W
Turn−On Delay Time
td(ON)
8.9
Rise Time Turn−Off Delay Time
tr td(OFF)
VGS = 4.5 V, VDS = 12 V, ID = 15 A, RG = 3.0 W
32 14.6
ns
Fall Time
tf
3
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 12 V, ID = 15 A, RG = 3.0 W
6.0 27
ns 18.6 2.3
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 10 A
TJ = 125°C
0.78 1.1 V
0.6
Reverse Recovery Time
tRR
30.8
66
Charge Time Discharge Time
ta
VGS = 0 V, dIS/dt = 100 A/ms,
tb
IS = 10 A
15
ns
15.8
Reverse Recovery Charge
QRR
20
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Sw.