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NTTFS4H05N Dataheets PDF



Part Number NTTFS4H05N
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTTFS4H05N DatasheetNTTFS4H05N Datasheet (PDF)

NTTFS4H05N MOSFET – Power, Single, N-Channel, m8-FL 25 V, 94 A Features • Optimized Design to Minimize Conduction and Switching Losses • Optimized Package to Minimize Parasitic Inductances • Optimized material for improved thermal performance • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • High Performance DC-DC Converters • System Voltage Rails • Netcom, Telecom • Servers & Point of Load MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter .

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NTTFS4H05N MOSFET – Power, Single, N-Channel, m8-FL 25 V, 94 A Features • Optimized Design to Minimize Conduction and Switching Losses • Optimized Package to Minimize Parasitic Inductances • Optimized material for improved thermal performance • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • High Performance DC-DC Converters • System Voltage Rails • Netcom, Telecom • Servers & Point of Load MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (TA = 25°C, Note 1) Power Dissipation RqJA (TA = 25°C, Note 1) VDSS 25 V VGS ±20 V ID 22.4 A PD 2.66 W Continuous Drain Current RqJC (TC = 25°C, Note 1) Power Dissipation RqJC (TC = 25°C, Note 1) Pulsed Drain Current (tp = 10 ms) Single Pulse Drain-to-Source Avalanche Energy (Note 1) (IL = 41 Apk, L = 0.1 mH) (Note 3) Drain to Source dV/dt ID 94 A PD 46.3 W IDM 304 A EAS 84 mJ dV/dt 7 V/ns Maximum Junction Temperature Storage Temperature Range TJ(max) 150 °C TSTG −55 to °C 150 Lead Temperature Soldering Reflow (SMD TSLD 260 °C Styles Only), Pb-Free Versions (Note 2) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness and FR4 PCB substrate. 2. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 3. This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C, VGS = 10 V, IL = 27 A, EAS = 36 mJ. www.onsemi.com VGS 4.5 V 10 V MAX RDS(on) 4.8 mW 3.3 mW TYP QGTOT 8.7 nC 18.9 nC 1 WDFN8 (m8FL) CASE 511AB MARKING DIAGRAM 1 S D S H05N D S AYWWG D G G D H05N A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS m8−FL (3.3 x 3.3 mm) (Top View) (Bottom View) N−CHANNEL MOSFET D (5−8) G (4) S (1,2,3) ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2016 1 June, 2019 − Rev. 4 Publication Order Number: NTTFS4H05N/D NTTFS4H05N THERMALCHARACTERISTICS Parameter Symbol Max Thermal Resistance, Junction-to-Ambient (Note 1 and 4) Junction-to-Case (Note 1 and 4) RqJA 47 RqJC 2.7 4. Thermal Resistance RqJA and RqJC as defined in JESD51−3. Units °C/W www.onsemi.com 2 NTTFS4H05N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 5) V(BR)DSS V(BR)DSS/ TJ IDSS IGSS VGS = 0 V, ID = 250 mA 25 VGS = 0 V, VDS = 20 V TJ = 25°C TJ = 125°C VDS = 0 V, VGS = 20 V V 15 mV/°C 1.0 mA 20 100 nA Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) Forward Transconductance gFS CHARGES AND CAPACITANCES VGS = VDS, ID = 250 mA 1.2 2.1 V 3.8 mV/°C VGS = 10 V ID = 30 A VGS = 4.5 V ID = 30 A VDS = 12 V, ID = 15 A 2.5 3.3 mW 3.8 4.8 69 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 6) CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) RG VGS = 0 V, f = 1 MHz, VDS = 12 V VGS = 4.5 V, VDS = 12 V; ID = 30 A VGS = 10 V, VDS = 12 V; ID = 30 A TA = 25°C 1205 1812 835 1293 pF 45 81 8.7 18.6 2.7 6.0 nC 3.6 6.2 1.88 5.6 18.9 40 nC 1.0 2.0 W Turn−On Delay Time td(ON) 8.9 Rise Time Turn−Off Delay Time tr td(OFF) VGS = 4.5 V, VDS = 12 V, ID = 15 A, RG = 3.0 W 32 14.6 ns Fall Time tf 3 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time td(ON) Rise Time tr Turn−Off Delay Time td(OFF) Fall Time tf DRAIN−SOURCE DIODE CHARACTERISTICS VGS = 10 V, VDS = 12 V, ID = 15 A, RG = 3.0 W 6.0 27 ns 18.6 2.3 Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C IS = 10 A TJ = 125°C 0.78 1.1 V 0.6 Reverse Recovery Time tRR 30.8 66 Charge Time Discharge Time ta VGS = 0 V, dIS/dt = 100 A/ms, tb IS = 10 A 15 ns 15.8 Reverse Recovery Charge QRR 20 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Sw.


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