Power MOSFET
NTTFS4H07N
MOSFET – Power, Single, N-Channel, m8-FL
25 V, 66 A
Features
• Optimized Design to Minimize Conduction and ...
Description
NTTFS4H07N
MOSFET – Power, Single, N-Channel, m8-FL
25 V, 66 A
Features
Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
High Performance DC-DC Converters System Voltage Rails Netcom, Telecom Servers & Point of Load
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (TA = 25°C, Note 1)
VDSS
25
V
VGS
±20
V
ID
18.5
A
Power Dissipation RqJA (TA = 25°C, Note 1)
Continuous Drain Current RqJC (TC = 25°C, Note 1)
Power Dissipation RqJC (TC = 25°C, Note 1)
Pulsed Drain Current (tp = 10 ms) Single Pulse Drain-to-Source Avalanche Energy (Note 1) (IL = 32 Apk, L = 0.1 mH) (Note 3)
Drain to Source dV/dt
PD
2.64
W
ID
66
A
PD
33.8
W
IDM
216
A
EAS
51
mJ
dV/dt
7
V/ns
Maximum Junction Temperature Storage Temperature Range
TJ(max)
150
°C
TSTG
−55 to
°C
150
Lead Temperature Soldering Reflow (SMD
TSLD
260
°C
Styles Only), Pb-Free Versions (Note 2)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thic...
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