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ESD8472 Dataheets PDF



Part Number ESD8472
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Ultra-Low Capacitance ESD Protection
Datasheet ESD8472 DatasheetESD8472 Datasheet (PDF)

ESD8472 Ultra-Low Capacitance ESD Protection Diodes Micro−Packaged Diodes for ESD Protection The ESD8472 is designed to protect voltage sensitive components that require ultra-low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, high breakdown voltage, high linearity, low leakage, and fast response time make these parts ideal for ESD protection on designs where board space is at a premium. It has industry leading capacitance linearity over volt.

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ESD8472 Ultra-Low Capacitance ESD Protection Diodes Micro−Packaged Diodes for ESD Protection The ESD8472 is designed to protect voltage sensitive components that require ultra-low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, high breakdown voltage, high linearity, low leakage, and fast response time make these parts ideal for ESD protection on designs where board space is at a premium. It has industry leading capacitance linearity over voltage making it ideal for RF applications. This capacitance linearity combined with the extremely small package and low insertion loss makes this part well suited for use in antenna line applications for wireless handsets and terminals. Features • Industry Leading Capacitance Linearity Over Voltage • Ultra−Low Capacitance: 0.2 pF • Insertion Loss: 0.030 dBm • 0201DNS Package: 0.60 mm x 0.30 mm • Stand−off Voltage: 5.3 V • Low Leakage: < 1 nA • Low Dynamic Resistance: < 1 W • 1000 ESD IEC61000−4−2 Strikes ±8 kV Contact / Air Discharged • SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free and are RoHS Compliant Typical Applications • RF Signal ESD Protection • RF Switching, PA, and Antenna ESD Protection • Near Field Communications • USB 2.0, USB 3.0 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value IEC 61000−4−2 Level 4 (Contact) (Note 1) IEC 61000−4−2 Level 4 (Air) (Note 1) ESD ±20 ±20 Unit kV Maximum Peak Pulse Current IPP 3.0 A IEC 61000−4−5 8/20 ms (Lightning) (Note 2) Total Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range °PD° RqJA TJ, Tstg 300 400 −55 to +150 mW °C/W °C Lead Solder Temperature − Maximum (10 Second Duration) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−2 waveform. 2. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform. 3. Mounted with recommended minimum pad size, DC board FR−4 www.onsemi.com X3DFN2 CASE 152AF MARKING DIAGRAM PIN 1 4M 4 = Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping† ESD8472MUT5G X3DFN2 15000 / Tape & (Pb−Free) Reel SZESD8472MUT5G X3DFN2 15000 / Tape & (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 February, 2015 − Rev. 7 1 Publication Order Number: ESD8472/D ESD8472 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current *See Application Note AND8308/D for detailed explanations of datasheet parameters. I IPP IT VC VBR VRWM IR IIRT VRWM VBR VC V IPP Bi−Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Reverse Working Voltage Breakdown Voltage Reverse Leakage Current Clamping Voltage Clamping Voltage ESD Clamping Voltage Junction Capacitance VRWM VBR IR VC VC VC CJ IT = 1 mA (Note 4) VRWM = 5.3 V IPP = 1 A (Note 5) IPP = 3 A (Note 5) Per IEC61000−4−2 VR = 0 V, f = 1 MHz VR = 0 V, f = 1 GHz 5.3 7.0 < 1 50 11 15 14 20 See Figures 1 and 2 0.20 0.30 0.15 0.30 V V nA V V pF Dynamic Resistance Insertion Loss RDYN TLP Pulse f = 1 MHz f = 8.5 GHz 1 0.050 0.250 W dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 5. Non−repetitive current pulse at 25°C, per IEC61000−4−5 waveform (Figure 9). Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 www.onsemi.com 2 ESD8472 TYPICAL CHARACTERISTICS Figure 3. IV Characteristics Figure 4. CV Characteristics CURRENT (A) CURRENT (A) Figure 5. RF Insertion Loss Figure 6. Capacitance over Frequency 20 0 18 −2 16 −4 14 −6 12 −8 10 −10 8 −12 6 −14 4 −16 2 −18 0 −20 0 5 10 15 20 25 30 −30 −25 −20 −15 −10 −5 VOLTAGE (V) VOLTAGE (V) 0 Figure 7. Positive TLP I−V Curve Figure 8. Negative TLP I−V Curve www.onsemi.com 3 % OF PEAK PULSE CURRENT ESD8472 100 tr 90 80 70 60 50 PEAK VALUE IRSM @ 8 ms PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE .


SZESD7471N2T5G ESD8472 ESD8472MUT5G


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