Document
ESD8472
Ultra-Low Capacitance ESD Protection Diodes
Micro−Packaged Diodes for ESD Protection
The ESD8472 is designed to protect voltage sensitive components that require ultra-low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, high breakdown voltage, high linearity, low leakage, and fast response time make these parts ideal for ESD protection on designs where board space is at a premium. It has industry leading capacitance linearity over voltage making it ideal for RF applications. This capacitance linearity combined with the extremely small package and low insertion loss makes this part well suited for use in antenna line applications for wireless handsets and terminals.
Features
• Industry Leading Capacitance Linearity Over Voltage • Ultra−Low Capacitance: 0.2 pF • Insertion Loss: 0.030 dBm • 0201DNS Package: 0.60 mm x 0.30 mm • Stand−off Voltage: 5.3 V • Low Leakage: < 1 nA • Low Dynamic Resistance: < 1 W • 1000 ESD IEC61000−4−2 Strikes ±8 kV Contact / Air Discharged • SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
Typical Applications
• RF Signal ESD Protection • RF Switching, PA, and Antenna ESD Protection • Near Field Communications • USB 2.0, USB 3.0
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
IEC 61000−4−2 Level 4 (Contact) (Note 1) IEC 61000−4−2 Level 4 (Air) (Note 1)
ESD
±20 ±20
Unit kV
Maximum Peak Pulse Current
IPP 3.0 A
IEC 61000−4−5 8/20 ms (Lightning) (Note 2)
Total Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
°PD° RqJA
TJ, Tstg
300 400
−55 to +150
mW °C/W
°C
Lead Solder Temperature − Maximum (10 Second Duration)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−2 waveform. 2. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform. 3. Mounted with recommended minimum pad size, DC board FR−4
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X3DFN2 CASE 152AF
MARKING DIAGRAM
PIN 1
4M
4 = Specific Device Code M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
ESD8472MUT5G
X3DFN2 15000 / Tape &
(Pb−Free)
Reel
SZESD8472MUT5G X3DFN2 15000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
February, 2015 − Rev. 7
1
Publication Order Number: ESD8472/D
ESD8472
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current *See Application Note AND8308/D for detailed explanations of datasheet parameters.
I IPP
IT VC VBR VRWM IR IIRT VRWM VBR VC V
IPP Bi−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Reverse Working Voltage Breakdown Voltage Reverse Leakage Current Clamping Voltage Clamping Voltage ESD Clamping Voltage Junction Capacitance
VRWM VBR IR VC VC VC CJ
IT = 1 mA (Note 4) VRWM = 5.3 V IPP = 1 A (Note 5) IPP = 3 A (Note 5) Per IEC61000−4−2
VR = 0 V, f = 1 MHz VR = 0 V, f = 1 GHz
5.3 7.0
< 1 50 11 15 14 20 See Figures 1 and 2 0.20 0.30 0.15 0.30
V V nA V V
pF
Dynamic Resistance Insertion Loss
RDYN
TLP Pulse
f = 1 MHz f = 8.5 GHz
1
0.050 0.250
W dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 5. Non−repetitive current pulse at 25°C, per IEC61000−4−5 waveform (Figure 9).
Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2
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ESD8472
TYPICAL CHARACTERISTICS
Figure 3. IV Characteristics
Figure 4. CV Characteristics
CURRENT (A) CURRENT (A)
Figure 5. RF Insertion Loss
Figure 6. Capacitance over Frequency
20 0
18 −2
16 −4
14 −6
12 −8
10 −10
8 −12
6 −14
4 −16
2 −18
0 −20
0
5
10 15 20 25 30
−30 −25 −20 −15 −10
−5
VOLTAGE (V)
VOLTAGE (V)
0
Figure 7. Positive TLP I−V Curve
Figure 8. Negative TLP I−V Curve
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% OF PEAK PULSE CURRENT
ESD8472
100 tr
90 80 70 60 50
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE .