Document
Ordering number : ENA1638A
BFL4001
SANYO Semiconductors
DATA SHEET
BFL4001
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Features
• Low ON-resistance • Avalanche resistance guarantee
• High-speed switching • 10V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
900 V
Gate-to-Source Voltage
VGSS
±30 V
Drain Current (DC)
IDc*1 IDpack*2
Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition)*3
6.5 A 4.1 A
Drain Current (Pulse)
IDP PW≤10μs, duty cycle≤1%
13 A
Allowable Power Dissipation
PD Tc=25°C (SANYO’s ideal heat dissipation condition)*3
2.0 W 37 W
Channel Temperature
Tch
150 °C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
223 mJ
Avalanche Current *5
IAV
6.5 A
Note :*1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=10mH, IAV=6.5A *5 L≤10mH, single pulse
Package Dimensions unit : mm (typ) 7528-001
10.16 3.18
4.7 2.54
Product & Package Information
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
2
3.3 15.87
6.68
15.8 3.23
1.47 MAX 0.8 123
2.54 2.54
12.98
FL4001
LOT No.
1
2.76
0.5 1 : Gate 2 : Drain 3 : Source
SANYO : TO-220F-3FS
3
http://semicon.sanyo.com/en/network 22912 TKIM TC-00002729/31010QB TK IM TC-00002256 No.A1638-1/5
BFL4001
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage
V(BR)DSS IDSS IGSS VGS(off) | yfs |
RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD
ID=10mA, VGS=0V VDS=720V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA VDS=20V, ID=3.25A ID=3.25A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=200V, VGS=10V, ID=6.5A VDS=200V, VGS=10V, ID=6.5A VDS=200V, VGS=10V, ID=6.5A IS=6.5A, VGS=0V
min 900
Ratings typ
2.0 1.8 3.6
2.1 850 130
43 19 49 156 52 44 7.0 22 0.85
max 1.0
±100 4.0 2.7
1.2
Unit
V mA nA V S
Ω pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
PW=10μs D.C.≤0.5%
VGS=10V
VDD=200V
ID=3.25A RL=61.5Ω D VOUT
G
BFL4001 P.G RGS=50Ω S
Avalanche Resistance Test Circuit
≥50Ω RG
L
BFL4001
10V 0V
50Ω
VDD
Drain Current, ID -- A Drain Current, ID -- A
ID -- VDS
14
Tc=25°C
12
10V 10 20V 7V
8
6
6V
4
2 5V VGS=4V
0 0 5 10 15 20 25 30 35 40
Drain-to-Source Voltage, VDS -- V IT15294
ID -- VGS
14
VDS=20V
12
Tc= --25°C
10
8 25°C
6 75°C
4
2
0 0 1 2 3 4 5 6 7 8 9 10
Gate-to-Source Voltage, VGS -- V IT15295 No.A1638-2/5
BFL4001
Static Drain-to-Source On-State Resistance, RDS(on) -- Ω
Forward Transfer Admittance, | yfs | -- S
6 RDS(on) -- VGS
ID=3.25A
5
4
Tc=75°C
3
25°C
2
--25°C
1
0 4 5 6 7 8 9 10 11 12 13
Gate-to-Source
| yfs
V| ol-t-ageID, VGS
--
V
7
5 VDS=20V
14 15 IT15296
3 2
25°C
1.0 7
Tc= --25°C 75°C
5
3 2
0.1
7
5 0.01 2 3 5 7 0.1
2 3 5 7 1.0
2 3 5 7 10
7
5
VDD=200V VGS=10V
Drain Current,
SW Time
I-D-
-- A
ID
IT15298
3
2 td(off)
100 7
5 tf
3 tr 2 td(on)
10
7 0.1
23
10
VDS=200V 9 ID=6.5A
8
5 7 1.0
2 3 5 7 10
Drain Current,
VGS --
IQDg--
A
23 IT15300
7
6
5
4
3
2
1
0 0 5 10 15 20 25 30 35 40 45 50
Total Gate Charge, Qg -- nC
IT15302
Drain Current, ID -- A
Ciss, Coss, Crss -- pF
Source Current, IS -- A Tc=75°C 25°C --25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- Ω
7 RDS(on) -- Tc
6
5
4
3 2
V GS=10V, I D=3.25A
1
0 --50
3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.2
5 3 2
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IS -- VSD
IT15297
VGS=0V
0.4 0.6 0.8 1.0 1.2
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-D
-- V
VDS
IT15299
f=1MHz
1000 7 5
3 2
100 7 5
3 2
Ciss
Coss Crss
10 0 5 10 15 20 25 30 35 40 45 50
Drain-to-Source
A
Voltage,
SO
VDS
--
V
IT15301
100
7
5
3
2 IDP=13A (PW≤10μs)
10 7
IDc(*1)=6.5A
5
3 2
IDpack(*2)=4.1A
1.0 7 5
3 2
Operation in
DC op1e0r0a1tmi0omsn1sms 100μ10sμs
0.1 7 5
this area is limited by RDS(on).
3 2
Tc=25°C
0.01 Single pulse
*1. Shows chip capability *2. SANYO's ideal heat dissipation condition
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7100 2 3 5 71000
Drain-to-Source Voltage, VDS -- V IT16791
No.A1638-3/5
Switching Time, SW Time -- ns
Gate-to-Source Voltage, VGS -- V
Allowable Power Dissipation, P.