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BFL4001 Dataheets PDF



Part Number BFL4001
Manufacturers Sanyo
Logo Sanyo
Description N-Channel Silicon MOSFET
Datasheet BFL4001 DatasheetBFL4001 Datasheet (PDF)

Ordering number : ENA1638A BFL4001 SANYO Semiconductors DATA SHEET BFL4001 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance • Avalanche resistance guarantee • High-speed switching • 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) IDc*1 IDpack*2 Limited only by maximum temperature Tch=15.

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Ordering number : ENA1638A BFL4001 SANYO Semiconductors DATA SHEET BFL4001 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance • Avalanche resistance guarantee • High-speed switching • 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) IDc*1 IDpack*2 Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition)*3 6.5 A 4.1 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 13 A Allowable Power Dissipation PD Tc=25°C (SANYO’s ideal heat dissipation condition)*3 2.0 W 37 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS 223 mJ Avalanche Current *5 IAV 6.5 A Note :*1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=10mH, IAV=6.5A *5 L≤10mH, single pulse Package Dimensions unit : mm (typ) 7528-001 10.16 3.18 4.7 2.54 Product & Package Information • Package : TO-220F-3FS • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine Marking Electrical Connection 2 3.3 15.87 6.68 15.8 3.23 1.47 MAX 0.8 123 2.54 2.54 12.98 FL4001 LOT No. 1 2.76 0.5 1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3FS 3 http://semicon.sanyo.com/en/network 22912 TKIM TC-00002729/31010QB TK IM TC-00002256 No.A1638-1/5 BFL4001 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=10mA, VGS=0V VDS=720V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA VDS=20V, ID=3.25A ID=3.25A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=6.5A VDS=200V, VGS=10V, ID=6.5A VDS=200V, VGS=10V, ID=6.5A IS=6.5A, VGS=0V min 900 Ratings typ 2.0 1.8 3.6 2.1 850 130 43 19 49 156 52 44 7.0 22 0.85 max 1.0 ±100 4.0 2.7 1.2 Unit V mA nA V S Ω pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit PW=10μs D.C.≤0.5% VGS=10V VDD=200V ID=3.25A RL=61.5Ω D VOUT G BFL4001 P.G RGS=50Ω S Avalanche Resistance Test Circuit ≥50Ω RG L BFL4001 10V 0V 50Ω VDD Drain Current, ID -- A Drain Current, ID -- A ID -- VDS 14 Tc=25°C 12 10V 10 20V 7V 8 6 6V 4 2 5V VGS=4V 0 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V IT15294 ID -- VGS 14 VDS=20V 12 Tc= --25°C 10 8 25°C 6 75°C 4 2 0 0 1 2 3 4 5 6 7 8 9 10 Gate-to-Source Voltage, VGS -- V IT15295 No.A1638-2/5 BFL4001 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Forward Transfer Admittance, | yfs | -- S 6 RDS(on) -- VGS ID=3.25A 5 4 Tc=75°C 3 25°C 2 --25°C 1 0 4 5 6 7 8 9 10 11 12 13 Gate-to-Source | yfs V| ol-t-ageID, VGS -- V 7 5 VDS=20V 14 15 IT15296 3 2 25°C 1.0 7 Tc= --25°C 75°C 5 3 2 0.1 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 7 5 VDD=200V VGS=10V Drain Current, SW Time I-D- -- A ID IT15298 3 2 td(off) 100 7 5 tf 3 tr 2 td(on) 10 7 0.1 23 10 VDS=200V 9 ID=6.5A 8 5 7 1.0 2 3 5 7 10 Drain Current, VGS -- IQDg-- A 23 IT15300 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 50 Total Gate Charge, Qg -- nC IT15302 Drain Current, ID -- A Ciss, Coss, Crss -- pF Source Current, IS -- A Tc=75°C 25°C --25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 RDS(on) -- Tc 6 5 4 3 2 V GS=10V, I D=3.25A 1 0 --50 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.2 5 3 2 --25 0 25 50 75 100 125 150 Case Temperature, Tc -- °C IS -- VSD IT15297 VGS=0V 0.4 0.6 0.8 1.0 1.2 Diode Ciss, Forward Voltage, Coss, Crss V-S-D -- V VDS IT15299 f=1MHz 1000 7 5 3 2 100 7 5 3 2 Ciss Coss Crss 10 0 5 10 15 20 25 30 35 40 45 50 Drain-to-Source A Voltage, SO VDS -- V IT15301 100 7 5 3 2 IDP=13A (PW≤10μs) 10 7 IDc(*1)=6.5A 5 3 2 IDpack(*2)=4.1A 1.0 7 5 3 2 Operation in DC op1e0r0a1tmi0omsn1sms 100μ10sμs 0.1 7 5 this area is limited by RDS(on). 3 2 Tc=25°C 0.01 Single pulse *1. Shows chip capability *2. SANYO's ideal heat dissipation condition 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7100 2 3 5 71000 Drain-to-Source Voltage, VDS -- V IT16791 No.A1638-3/5 Switching Time, SW Time -- ns Gate-to-Source Voltage, VGS -- V Allowable Power Dissipation, P.


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