N-Channel Silicon MOSFET
Ordering number : ENA1796
BFL4004
SANYO Semiconductors
DATA SHEET
BFL4004
N-Channel Silicon MOSFET
General-Purpose S...
Description
Ordering number : ENA1796
BFL4004
SANYO Semiconductors
DATA SHEET
BFL4004
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Features
ON-resistance RDS(on)=1.9Ω (typ.) Input capacitance Ciss=710pF (typ.)
10V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation
VDSS VGSS IDc*1 IDpack*2 IDP
PD
Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition)*3 PW≤10μs, duty cycle≤1%
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
800 V ±30 V 6.5 A 4.3 A
13 A 2.0 W 36 W
Channel Temperature
Tch
150 °C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4 Avalanche Current *5
EAS IAV
241 mJ 6.5 A
Note :*1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=99V, L=10mH, IAV=6.5A (Fig.1) *5 L≤10mH, single pulse
Package Dimensions unit : mm (typ) 7509-002
10.0 3.2
4.5 2.8
Product & Package Information
Package
: TO-220FI(LS)
JEITA, JEDEC
: SC-67, SOT-186A, TO-220F
Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine
Marking
Electrical Connection
2
3.5 7.2 16.0
16.1 3.6
0.9 1.2 0.75 123
2.55 2.55
2.4 14.0
0.6
1....
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