BFL4007

Ordering number : ENA1689 BFL4007 SANYO Semiconductors DATA SHEET BFL4007 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features Reverse recovery time trr=95ns (typ) Input capacitance Ciss=1200pF (typ) ON-resistance RDS(on)=0.52Ω (typ) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS IDc*1 IDpack*2 IDP Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition)*3 PW≤10μs, duty cycle≤1% 600 V ±30 V 14 A 8.7 A 49 A Source-to-Drain Diode Forward Current (DC) IS Source-to-Drain Diode Forward Current (Pulse) ISP Allowable Power Dissipation PD PW≤10μs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition*)3 14 A 49 A 2.0 W 40 W Note :*1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. Continued on next page. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. Package Dimensions unit : mm (typ) 7509-002 10.0 3.2 4.5 2.8 Product & Package Information Package : TO-220FI(LS) JEITA, JEDEC : SC-67, SOT-186A, TO-220F Minimum Packing Quantity : 100/bag, 50/magazine Marking 3.5 7.2 16.0 16.1 3.6 0.9 1.2 0.75 123 2.55 2.55 2.4 14.0 0.6 1.2 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) ...