BFL4026

Ordering number : ENA1797A BFL4026 SANYO Semiconductors DATA SHEET BFL4026 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features ON-resistance RDS(on)=2.8Ω (typ.) 10V drive Input capacitance Ciss=650pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) IDc*1 IDpack*2 Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition)*3 5A 3.5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 10 A Allowable Power Dissipation PD Tc=25°C (SANYO’s ideal heat dissipation condition)*3 2.0 W 35 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS 132 mJ Avalanche Current *5 IAV 5A Note :*1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=10mH, IAV=5A (Fig.1) *5 L≤10mH, single pulse Package Dimensions unit : mm (typ) 7528-001 10.16 3.18 4.7 2.54 BFL4026-1E Product & Package Information Package : TO-220F-3FS JEITA, JEDEC : SC-67 Minimum Packing Quantity : 50 pcs./magazine Marking Electrical Connection 2 3.3 15.87 6.68 15.8 3.23 1.47 MAX 0.8 123 2.54 2.54 12.98 2.76 0.5 1 : Gat...