Data Sheet
IRFR110, IRFU110
January 2002
4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancemen...
Data Sheet
IRFR110, IRFU110
January 2002
4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect
transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advanced power MOSFETs are designed for use in applications such as switching
regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power. These
transistors can be operated directly from integrated circuits.
Formerly developmental type TA17441.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFU110
TO-251AA
IFU110
IRFR110
TO-252AA
IFR110
NOTE: When ordering, use the entire part number.
Features
4.7A, 100V rDS(ON) = 0.540Ω Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance 175oC Operating Temperature
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
G S
Packaging
JEDEC TO-251AA
SOURCE DRAIN GATE
DRAIN (FLANGE)
JEDEC TO-252AA
GATE SOURCE
DRAIN (FLANGE)
©2002 Fairchild Semiconductor Corporation
IRFR110, IRFU110 Rev. B
IRFR110, IRFU110
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....