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JAN2N2432A Dataheets PDF



Part Number JAN2N2432A
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description NPN SILICON LOW POWER TRANSISTOR
Datasheet JAN2N2432A DatasheetJAN2N2432A Datasheet (PDF)

TECHNICAL DATA NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/313 Devices 2N2432 2N2432A Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temp. Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.0 mW/0C above TA > +250C 2) Derate lin.

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TECHNICAL DATA NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/313 Devices 2N2432 2N2432A Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temp. Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.0 mW/0C above TA > +250C 2) Derate linearly 4.0 mW/0C above TC > +250C Symbol VCEO VCBO VECO IC PT Tstg TJ 2N2432 2N2432A 30 45 30 45 15 18 100 300 600 -65 to +200 -65 to +175 Unit Vdc Vdc Vdc mAdc mW mW 0C 0C Symbol RθJC Max. 0.25 Unit mW/ 0C ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Emitter-Collector Breakdown Voltage IE = 100 µAdc, IB = 0 2N2432 2N2432A V(BR)ECO IE = 10 mAdc, IB = 0 Collector-Emitter Breakdown Current Both IC = 10 mAdc 2N2432 2N2432A V(BR)CEO Collector-Emitter Cutoff Current VCB = 25 Vdc VCB = 40 Vdc 2N2432 2N2432A ICES Min. 15 18 10 30 45 TO- 18* (TO-206AA) *See appendix A for package outline Max. Unit Vdc Vdc 10 ηAdc 10 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N2432, 2N2432A JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics OFF CHARACTERISTICS (con’t) Collector-Emitter Cutoff Current VCB = 30 Vdc 2N2432 VCB = 25 Vdc 2N2432 VCB = 40 Vdc 2N2432A VCB = 45 Vdc Emitter-Collector Cutoff Current 2N2432A VEC = 15 Vdc, VBC = 0 Vdc Emitter-Base Cutoff Current VEB = 15 Vdc ON CHARACTERISTICS (1) Forward-Current Transfer Ratio IC = 10 µAdc, VCE = 5.0 Vdc IC = 1.0 mAdc, VCE = 5.0 Vdc Forward-Current Transfer Ratio (Inverted Connection) IC = 0.2 mAdc, VCE = 5.0 Vdc 2N2432 2N2432A Collector-Emitter Saturation Voltage IC = 10 Vdc, IB = 0.5 mAdc Emitter-Collector Offset Voltage IE = 0 mAdc, IB = 200 µAdc 2N2432 2N2432A IE = 0 mAdc, IB = 1.0 mAdc 2N2432 2N2432A DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 20 MHz Output Capacitance VCB = 0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz (1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. Symbol ICBO IECS IEBO hFE hFE(inv) VCE(sat) VEC(ofs) hfe Cobo Cibo Min. Max. Unit 100 µAdc 10 ηAdc 100 µAdc 10 ηAdc 2.0 ηAdc 2.0 ηAdc 30 80 400 2.0 3.0 0.15 mVdc 0.5 0.4 mVdc 0.1 0.7 2.0 10 12 12 pF pF 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2 .


JANTXV2N2432 JAN2N2432A JANTX2N2432A


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