Document
TECHNICAL DATA
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/313
Devices
2N2432 2N2432A
Qualified Level
JAN JANTX JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Collector Current
Total Power Dissipation
@ TA = +250C (1) @ TC = +250C (2)
Operating & Storage Junction Temp. Range
THERMAL CHARACTERISTICS Characteristics
Thermal Resistance, Junction-to-Case 1) Derate linearly 2.0 mW/0C above TA > +250C 2) Derate linearly 4.0 mW/0C above TC > +250C
Symbol VCEO VCBO VECO IC
PT
Tstg TJ
2N2432 2N2432A 30 45 30 45 15 18 100 300 600
-65 to +200 -65 to +175
Unit Vdc
Vdc
Vdc
mAdc
mW mW 0C 0C
Symbol RθJC
Max. 0.25
Unit mW/ 0C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Emitter-Collector Breakdown Voltage
IE = 100 µAdc, IB = 0
2N2432 2N2432A
V(BR)ECO
IE = 10 mAdc, IB = 0 Collector-Emitter Breakdown Current
Both
IC = 10 mAdc
2N2432 2N2432A
V(BR)CEO
Collector-Emitter Cutoff Current
VCB = 25 Vdc VCB = 40 Vdc
2N2432 2N2432A
ICES
Min.
15 18 10
30 45
TO- 18* (TO-206AA)
*See appendix A for package outline
Max.
Unit
Vdc
Vdc
10 ηAdc 10
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101 Page 1 of 2
2N2432, 2N2432A JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
OFF CHARACTERISTICS (con’t)
Collector-Emitter Cutoff Current
VCB = 30 Vdc
2N2432
VCB = 25 Vdc
2N2432
VCB = 40 Vdc
2N2432A
VCB = 45 Vdc Emitter-Collector Cutoff Current
2N2432A
VEC = 15 Vdc, VBC = 0 Vdc Emitter-Base Cutoff Current
VEB = 15 Vdc
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 10 µAdc, VCE = 5.0 Vdc
IC = 1.0 mAdc, VCE = 5.0 Vdc Forward-Current Transfer Ratio (Inverted Connection)
IC = 0.2 mAdc, VCE = 5.0 Vdc
2N2432 2N2432A
Collector-Emitter Saturation Voltage
IC = 10 Vdc, IB = 0.5 mAdc Emitter-Collector Offset Voltage
IE = 0 mAdc, IB = 200 µAdc
2N2432 2N2432A
IE = 0 mAdc, IB = 1.0 mAdc
2N2432 2N2432A
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 20 MHz Output Capacitance
VCB = 0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance
VEB = 0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz (1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
Symbol
ICBO
IECS IEBO
hFE hFE(inv) VCE(sat) VEC(ofs)
hfe Cobo Cibo
Min. Max. Unit
100 µAdc 10 ηAdc 100 µAdc 10 ηAdc
2.0 ηAdc
2.0 ηAdc
30 80 400
2.0 3.0
0.15 mVdc
0.5 0.4 mVdc 0.1 0.7
2.0 10 12 12
pF pF
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101 Page 2 of 2
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