RS1213D

RS1213D Rev. 1.0 InGaP HBT 2.4~2.5 GHz High Power Amplifier Description The RS1213D is a high power amplifier (PA) optimized for 802.11b/g/n (WLAN) applications in the 2.4-2.5GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active DC bias, on-chip input matching and output pre-matching. In 802.11g mode (OFDM 64QAM, 54Mbps), it is capable to provide a low EVM (Error-Vector magnitude) of 3% at 26.8dBm and 23.5dBm linear output power by single supply voltage 5V and 3.3V, respectively The compact footprint, low profile and excellent thermal capability make the RS1213D an ideal solution for IEEE 802.11b/g/n applications. Applications WLAN (IEEE 802.11b/g/n) Package QFN 3mm x 3mm 16 Lead Package Key Features Advanced InGaP HBT Excellent RF Stability with Moderate Gain: – Typically 32.7dB gain across 2.4 – 2.5 GHz High Linear Output Power: – 26.8dBm @3% EVM/5V 54Mbps 64QAM 11g – 23.5dBm @3% EVM/3.3V 54Mbps 64QAM 11g Low Current Consumption: – 230mA Quiescent Current @5V – 360mA Icc @ 26dBm 54Mbps 64QAM 11g High Power-added Efficiency – ~25% Efficiency @ 26.8dBm/5V for 54Mbps 64QAM 802.11g signal Optional 26dB Attenuation High-speed Power-up/-down – Turn on/off time (10%- 90%) <150 ns High Temperature Stability – 2 dB gain variation between 0°C to +85°C Simplified Off-Chip Matching (only one inductance compared to RTC6649) Simple output match for optimal EVM Excellent On-chip Power Detection –...