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FS50KM-06

Mitsubishi Electric Semiconductor

Nch POWER MOSFET

MITSUBISHI Nch POWER MOSFET FS3VS-18A HIGH-SPEED SWITCHING USE FS3VS-18A OUTLINE DRAWING r Dimensions in mm 4.5 1.3 ...


Mitsubishi Electric Semiconductor

FS50KM-06

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Description
MITSUBISHI Nch POWER MOSFET FS3VS-18A HIGH-SPEED SWITCHING USE FS3VS-18A OUTLINE DRAWING r Dimensions in mm 4.5 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 1.5MAX. 10.5MAX. 0 +0.3 –0 1 5 0.8 0.5 q w e wr 2.6 ± 0.4 q ¡VDSS ................................................................................ 900V ¡rDS (ON) (MAX) ................................................................ 4.0Ω ¡ID ............................................................................................ 3A q GATE w DRAIN e SOURCE r DRAIN e TO-220S APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 900 ±30 3 9 100 –55 ~ +150 –55 ~ +150 1.2 4.5 Unit V V A A W °C °C g Feb.1999 Typical value (1.5) MITSUBISHI Nch POWER MOSFET FS3VS-18A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 900V, VGS = 0V ID = 1mA, VDS = 10V ID = 1.5A, VGS = 10V ID = 1.5A, VGS = 10V ID = 1.5A, VDS = 10V VDS = 25V, VGS = 0V,...




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