LBZT52B2V0T1G

LESHAN RADIO COMPANY, LTD. Surface Mount Zener Diodes Features: *500mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.0V to 36V *Pb-Free package is available LBZT52B2V0T1G Series 1 2 Mechanical Data: *Case : SOD-123 Molded plastic *Terminals: Solderable per MIL-STD-202, Method 208 *Polarity: Cathode Indicated by Polarity Band *Marking: Marking Code (See Specific marking table) *Weigh: 0.01grams(approx) SOD-123 Equivalent Circuit Diagram 1 Cathode 2 Anode Maximum Ratings and Electrical Characteristics (TA=25 C Unless Otherwise Noted) Characteristics Symbol Value Unit Total Power Dissipation on FR-5 Board(1) PD 500 mW Thermal Resistance Junction to Ambient Air (1) R JA 305 C/W Forward Voltage @ IF=10mA VF 0.9 V Junction and Storage Temperature Range Tj,TSTG -55 to +150 C NOTES: 1. Device mounted on ceramic PCB; 7.6mm 9.4mm 0.87mm with pad areas 25mm2 - Device Marking Code Ratings and Characteristic curves PD,POWER DISSIPATION(W) , Device LBZT52B2V0T1G LBZT52B2V2T1G LBZT52B2V4T1G LBZT52B2V7T1G LBZT52B3V0T1G LBZT52B3V3T1G LBZT52B3V6T1G LBZT52B3V9T1G LBZT52B4V3T1G LBZT52B4V7T1G LBZT52B5V1T1G LBZT52B5V6T1G LBZT52B6V2T1G LBZT52B6V8T1G LBZT52B7V5T1G LBZT52B8V2T1G Marking 02 12 22 32 42 52 62 72 82 92 A2 C2 E2 F2 H2 J2 Device Marking LBZT52B9V1T1G LBZT52B10T1G LBZT52B11T1G L2 05 15 LBZT52B12T1G LBZT52B13T1G 25 35 LBZT52B15T1G 45 LBZT52B16T1G 55 LBZT52B18T1G 65 LBZT52B20T1G LBZT52B22T1G LBZT52B24T1G ...