IXGH30N120B3D1

GenX3TM 1200V IGBT High speed Low Vsat PT IGBTs 3-20 kHz switching IXGH30N120B3D1 IXGT30N120B3D1 VCES IC110 VCE(sat) tfi(typ) = 1200V = 30A ≤£ 3.5V = 204ns Symbol VCES VCGR VGES VGEM IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped inductive load TC = 25°C Mounting torque (TO-247) Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s TO-247 TO-268 Maximum Ratings 1200 1200 V V ±20 ±30 30 28 150 ICM = 60 @ 0.8 VCE 300 V V A A A A W -55 ... +150 150 -55 ... +150 1.13 / 10 300 260 6 4 °C °C °C Nm/lb.in. °C °C g g Symbol VGE(th) ICES IGES VCE(sat) Test Conditions Characteristic Values (TJ = 25°C, unless Min. otherwise specified) Typ. Max. IC = 250μA, VCE = VGE VCE = VCES VGE = 0V TJ = 125°C VCE = 0V, VGE = ±20V IC = 30A, VGE = 15V, Note 1 TJ = 125°C 3.0 5.0 V 300 μA 1.5 mA ±100 nA 2.96 2.95 3.5 V V TO-247 AD (IXGH) G CE TO-268 (IXGT) C (TAB) GE C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Features z Optimized for low conduction and switching losses z Square RBSOA z Anti-parallel ultra fast diode z International standard packages Advantages z High power density z Low gate drive requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Welding Machines © 2008 IXYS CORPORATION, All rights reserved ...