PMPB20XPE
20 V, single P-channel Trench MOSFET
30 November 2012
Product data sheet
1. Product profile
1.1 General des...
PMPB20XPE
20 V, single P-channel Trench MOSFET
30 November 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect
Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits 2.4 kV ESD protected Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portable devices Hard disk and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-12 -
12 V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -10.3 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -7.2 A; Tj = 25 °C resistance
- 19 23.5 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
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NXP Semiconductors
PMPB20XPE
20 V, single P-channel Trench MOSFET
2. Pinning information
Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D dra...