High Speed Power Switching MOS FET
RJK6011DJA
600V - 0.1A - MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 35 Ω typ. (at ID = 0....
Description
RJK6011DJA
600V - 0.1A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 35 Ω typ. (at ID = 0.05 A, VGS = 10 V, Ta = 25°C)
Low drive current High density mounting
Outline
RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1))
G 321
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
Symbol
VDSS
VGSS
ID
ID
Note1 (pulse)
IDR
IDR
Note1 (pulse)
Pch
θch-a
Tch
Tstg
Preliminary Datasheet
R07DS0873EJ0200 Rev.2.00
Jan 28, 2014
D
1. Source 2. Drain 3. Gate
S
Ratings 600 ±30 0.1 0.4 0.1 0.4 0.75 166.7 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A W
°C/W °C °C
R07DS0873EJ0200 Rev.2.00 Jan 28, 2014
Page 1 of 6
RJK6011DJA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance
V(BR)DSS
600
—
— V ID = 10 mA, VGS = 0
IDSS
—
—
1 μA VDS = 600 V, VGS = 0
IGSS
—
— ±0.1 μA VGS = ±30 V, VDS = 0
VGS(off)
3
—
5 V VDS = 10 V, ID = 1 mA
RDS(on)
—
35
52 Ω ID = 0.05 A, VGS = 10 V Note2
Input capacitance Output capacitance Reverse transfer capacitan...
Similar Datasheet