RJK6011DJA

RJK6011DJA 600V - 0.1A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 35 Ω typ. (at ID = 0.05 A, VGS = 10 V, Ta = 25°C) Low drive current High density mounting Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) G 321 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) Pch θch-a Tch Tstg Preliminary Datasheet R07DS0873EJ0200 Rev.2.00 Jan 28, 2014 D 1. Source 2. Drain 3. Gate S Ratings 600 ±30 0.1 0.4 0.1 0.4 0.75 166.7 150 –55 to +150 (Ta = 25°C) Unit V V A A A A W °C/W °C °C R07DS0873EJ0200 Rev.2.00 Jan 28, 2014 Page 1 of 6 RJK6011DJA Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance V(BR)DSS 600 — — V ID = 10 mA, VGS = 0 IDSS — — 1 μA VDS = 600 V, VGS = 0 IGSS — — ±0.1 μA VGS = ±30 V, VDS = 0 VGS(off) 3 — 5 V VDS = 10 V, ID = 1 mA RDS(on) — 35 52 Ω ID = 0.05 A, VGS = 10 V Note2 Input capacitance Output capacitance Reverse transfer capacitan...