2SK3472
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3472
Switching Regulator Applications
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2SK3472
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3472
Switching
Regulator Applications
Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Maximum Ratings (Tc = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
Rating
450 450 ±30
1 2 20
122
1 2 150 −55 to150
Unit
V V V A A W
mJ
A mJ °C °C
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case Thermal resistance, channel to ambient
Rth (ch-c) Rth (ch-a)
6.25 125
°C/W °C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 203 mH, RG = 25 Ω, IAR = 1 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This
transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-03-04
2SK3472
Electrical Characteristics (Tc = 25°C)
Characteristics
Gate leakage current...
