SILICON MMIC WIDEBAND AMPLIFIER
BIPOLAR ANALOG INTEGRATED CIRCUITS
UPC2711TB, UPC2712TB
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER
FEATURES • ...
Description
BIPOLAR ANALOG INTEGRATED CIRCUITS
UPC2711TB, UPC2712TB
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER
FEATURES HIGH DENSITY SURFACE MOUNTING:
6 pin super minimold or SOT- 363 package SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V WIDEBAND RESPONSE:
UPC2711TB: fu = 2.9 GHz TYP UPC2712TB: fu = 2.6 GHz TYP POWER GAIN: UPC2711TB: GP = 13 dB TYP UPC2712TB: GP = 20 dB TYP
DESCRIPTION The UPC2711TB and UPC2712TB are Silicon MMIC Wideband Amplifiers manufactured using NEC's 20 GHz fT NESATTM III silicon bipolar process. These devices are designed for use as buffer amps in DBS tuners. The UPC2711/ 12TB are pin compatible and have comparable performance as the larger UPC2711/12T, so they are suitable for use as a replacement to help reduce system size. These IC's are housed in a 6 pin super minimold or SOT-363 package.
Stringent quality assurance and test procedure ensure the highest reliability and performance.
TYPICAL PERFORMANCE CURVES
GAIN vs. FREQUENCY
25 UPC2712TB
20
15 UPC2711TB
10
Gain, GP (dB)
5
0.5 1.0 1.5 2.0 2.5
3.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 5.0 V, ZL = ZS = 50 W)
SYMBOLS
PART NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS
ICC Circuit Current (no signal)
GP Power Gain, f = 1 GHz
fU
ΔGP PO(SAT)
Upper Limit Operating Frequency (The gain at fU is 3 dB down from the gain at 100 MHz) Gain Flatness, f = 0.1 GHz to 2.5 GHz Maximum Output Level, f = 1 GHz, PIN = 0 dBm
NF Noise Figure, f = 1 GHz
RLIN
Input Return Loss, f =...
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