Power MOSFET
PD - 96262
IRF8721GPbF
Applications
l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power
l Contro...
Description
PD - 96262
IRF8721GPbF
Applications
l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power
l Control MOSFET for Isolated DC-DC Converters in Networking Systems
HEXFET® Power MOSFET
VDSS RDS(on) max
Qg
:30V 8.5m @VGS = 10V 8.3nC
Benefits l Very Low Gate Charge
S1
AA 8D
l Low RDS(on) at 4.5V VGS l Low Gate Impedance
S2 S3
7D 6D
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating l Lead-Free
G4
5D
Top View
SO-8
l Halogen-Free
Description
The IRF8721GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package The IRF8721GPbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for Notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
Max. 30 ± 20 14 11 110 2.5 1.6
0.02 -55 to + 150
Units V
A
W W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead fRθJA Junction-to-Ambi...
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