HEXFET Power MOSFET
VDS
VGS max
RDS(on) max
(@VGS = -10V)
ID
(@TA = 25°C)
-30 ±25 17.5
-9.8
V V mΩ
A
PD - 97571
IRF9392PbF
HEXFET® Power ...
Description
VDS
VGS max
RDS(on) max
(@VGS = -10V)
ID
(@TA = 25°C)
-30 ±25 17.5
-9.8
V V mΩ
A
PD - 97571
IRF9392PbF
HEXFET® Power MOSFET
6 6 6 *
' ' ' '
SO-8
Applications Adaptor Input Switch for Notebook PC
Features and Benefits Features 25V VGS max Industry-Standard SO8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits Direct Drive at High VGS Multi-Vendor Compatibility Environmentally Friendlier
Orderable part number
IRF9392PbF IRF9392TRPbF
Package Type
SO8 SO8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
Continuous Drain Current, VGS @ -10V
cPulsed Drain Current fPower Dissipation fPower Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Notes through are on page 2 www.irf.com
Max. -30 ±25 -9.8 -7.8 -80 2.5 1.6 0.02 -55 to + 150
Units V
A
W W/°C
°C
1
09/30/2010
IRF9392PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS ∆ΒVDSS/∆TJ RDS(on)
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
-30 ––– ––– –––
VGS(th)
Gate Threshold Voltage
-1.3
∆VGS(th) IDSS
Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current
––– ––– –––
IGSS Gate-to-Source Forward Leakage G...
Similar Datasheet