IRF9392TRPbF

VDS VGS max RDS(on) max (@VGS = -10V) ID (@TA = 25°C) -30 ±25 17.5 -9.8 V V mΩ A PD - 97571 IRF9392PbF HEXFET® Power MOSFET 6 6 6 * ' ' ' ' SO-8 Applications Adaptor Input Switch for Notebook PC Features and Benefits Features 25V VGS max Industry-Standard SO8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits Direct Drive at High VGS Multi-Vendor Compatibility Environmentally Friendlier Orderable part number IRF9392PbF IRF9392TRPbF Package Type SO8 SO8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Note Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ -10V ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Continuous Drain Current, VGS @ -10V cPulsed Drain Current fPower Dissipation fPower Dissipation Linear Derating Factor TJ Operating Junction and TSTG Storage Temperature Range Notes  through † are on page 2 www.irf.com Max. -30 ±25 -9.8 -7.8 -80 2.5 1.6 0.02 -55 to + 150 Units V A W W/°C °C 1 09/30/2010 IRF9392PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. BVDSS ∆ΒVDSS/∆TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance -30 ––– ––– ––– VGS(th) Gate Threshold Voltage -1.3 ∆VGS(th) IDSS Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ––– ––– ––– IGSS Gate-to-Source Forward Leakage G...