Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2211T1M
P-CHANNEL MOS FET FOR SWITCHING
DESCRIPTION The μ PA2211T1M is P-channel MOS Field Effect Transistor designed
for power management applications of portable equipments, such as load switch.
FEATURES • Low on-state resistance
RDS(on)1 = 25 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A) RDS(on)2 = 34 mΩ MAX. (VGS = −2.5 V, ID = −3.8 A) RDS(on)3 = 66 mΩ MAX. (VGS = −1.8 V, ID = −3.8 A) • Built-in gate protection diode • −1.8 V Gate drive available
ORDERING INFORMATION
PART NUMBER μ PA2211T1M-T1-AT Note μ PA2211T1M-T2-AT Note
PACKING 8 mm embossed taping
3000 p/reel
PACKAGE 8-pin VSOF (1629)
0.011 g TYP.
Note Pb-free (This product does not contain Pb in external electrode and other parts.)
0.225±0.1
PACKAGE DRAWING (Unit: mm)
2.9±0.1
0.65 8
5
A
0.145±0.05 0 to 0.025
1.9±0.1 1.6±0.1
1 0.32±0.05
4 0.05 M S A
0.8±0.05
S 0.05 S
1, 2, 3, 6, 7, 8: Drain 4 : Gate 5 : Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
−12 V
Gate to Source Voltage (VDS = 0 V)
VGSS
m8 V
Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation Note2 Total Power Dissipation (PW = 5 sec) Note2
ID(DC) ID(pulse) PT1 PT2
m7.5 m30 1.1
2.5
A A W W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg −55 to +150 °C
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. G19452EJ1V0DS00 (1st edition) Date Published September 2008 NS Printed in Japan
2008
μ PA2211T1M
ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
Zero Gate Voltage Drain Current
IDSS
Gate Leakage Current
IGSS
Gate to Source Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note
VGS(off) | yfs | RDS(on)1
RDS(on)2
RDS(on)3
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
Gate to Source Charge
QGS
Gate to Drain Charge Body Diode Forward Voltage Note
QGD VF(S-D)
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
VDS = −12 V, VGS = 0 V VGS = m8 V, VDS = 0 V VDS = −10 V, ID = −1 mA VDS = −10 V, ID = −3.8 A VGS = −4.5 V, ID = −7.5 A VGS = −2.5 V, ID = −3.8 A VGS = −1.8 V, ID = −3.8 A VDS = −10 V, VGS = 0 V, f = 1 MHz VDD = −10 V, ID = −3.8 A, VGS = −4.0 V, RG = 10 Ω
VDD = −9.6 V, VGS = −4.5 V, ID = −7.5 A IF = −7.5 A, VGS = 0 V IF = −7.5 A, VGS = 0 V, di/dt = −47 A/μs
−0.45 5
Note Pulsed
TYP.
21 25 34 1350 255 215 10.7 16.7 101.0 76.4 14.9 2.8 4.0 0.88 60 19
MAX. -10 m10 −1.5 25 34 66
1.2
UNIT
μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG PG.
VGS (−) 0
τ
τ = 1μs Duty Cycle ≤ 1%
RL VDD
VGS (−)
VGS
Wave Form
10% 0
VDS (−)
90% VDS
VDS
Wave Form
0
td(on)
90% VGS
90% 10% 10%
tr td(off)
tf
ton toff
D.U.T. IG = −2 mA
PG. 50 Ω
RL VDD
2 Data Sheet G19452EJ1V0DS
μ PA2211T1M
TYPICAL CHARACTERISTICS (TA = 25°C)
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120
100
80
60
40
20
0 0 25 50 75 100 125 150 175 TA - Ambient Temperature - °C
ID - Drain Current - A
FORWARD BIAS SAFE OPERATING AREA
-100
-10 -1
-0.1 -0.01
ID(pulse) ID(DC) RD S((VonG)SL=im−i4t e.5d V ) Single Pulse
PW
= 300
Po
wer
1i 0 0 5i s
Dissipat
1i 0 msi
ion
1i msi msi
Limit ed
μs
Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
-0.01
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 113.6°C/Wi 100
rth(t) - Transient Thermal Resistance - °C/W
10
ID - Drain Current - A
1
0.1 100 μ
Single Pulse Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
1m
10 m
100 m
1
10
PW - Pulse Width - s
100 1000
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
-30
FORWARD TRANSFER CHARACTERISTICS -100
ID - Drain Current - A
-25 VGS = −4.5 V
-20 −2.5 V
-15
-10
Tch = −25°C -1 25°C
75°C -0.1 125°C
-10
-5
-0 -0
−1.8 V
Pulsed
-0.2 -0.4 -0.6 VDS - Drain to Source Voltage - V
-0.8
-0.01
-0.001
-0.0001 0
VDS = −10 V Pulsed
-0.5 -1 -1.5 VGS - Gate to Source Voltage - V
-2
.