UPA2200T1M

DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2200T1M N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The μ PA2200T1M is N-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch. FEATURES Low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 31 mΩ MAX. (VGS = 4.5 V, ID = 4 A) Built-in gate protection diode 4.5 V Gate drive available ORDERING INFORMATION PART NUMBER PACKING PACKAGE μ PA2200T1M-T1-AT Note μ PA2200T1M-T2-AT Note 8 mm embossed taping 8-pin VSOF (1629) 3000 p/reel 0.011 g TYP. Note Pb-free (This product does not contain Pb in external electrode and other parts.) 0.225±0.1 PACKAGE DRAWING (Unit: mm) 2.9±0.1 0.65 8 5 A 0.145±0.05 0 to 0.025 1.9±0.1 1.6±0.1 1 0.32±0.05 4 0.05 M S A 0.8±0.05 S 0.05 S 1, 2, 3, 6, 7, 8: Drain 4 : Gate 5 : Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation Note2 Total Power Dissipation (PW = 5 sec) Note2 ID(DC) ID(pulse) PT1 PT2 ±8 ±32 1.1 2.5 A A W W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected b...