FDD050N03B

FDD050N03B N-Channel PowerTrench® MOSFET March 2013 FDD050N03B N-Channel PowerTrench® MOSFET 30 V, 90 A, 5.0 mΩ Features RDS(on) = 3.7 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A Fast Switching Speed Low Gate Charge, QG = 33 nC( Typ.) High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Telecom PSU D D G S D-PAK (TO-252) G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter FDD050N03B VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC (Note 3) 30 ±16 90* 63* 50 360 72 2 65 0.43 TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds -55 to +175 300 *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A. Thermal Characteristics Symbol RθJC RθJA Par...