UPA2821T1L

μPA2821T1L MOS FIELD EFFECT TRANSISTOR PreliminaryData Sheet R07DS0753EJ0100 Rev.1.00 May 25, 2012 Description The μPA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25°C) Low on-state resistance ⎯ RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 26 A) 4.5 V Gate-drive available Small surface mount package (8-pin HVSON (3333)) Pb-free, Halogen Free Ordering Information Part No. Lead Plating Packing Package μPA2821T1L-E1-AT ∗1 Pure Sn (Tin) Tape 3000 p/reel 8-pin HVSON (3333) μPA2821T1L-E2-AT ∗1 typ. 0.028 g Note: ∗1. Pb-free (This product does not contain Pb in external electrode and other parts.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation ∗2 Total Power Dissipation (PW = 10 sec) ∗2 Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗3 Signal Avalanche Energy ∗3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 PT3 Tch Tstg IAS EAS Ratings 30 ±20 ±26 ±104 1.5 3.8 52 150 −55 to +150 18 32.4 Unit V V A A W W W °C °C A mJ Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Rth(ch-A) Channel to Case (Drain) Thermal Resistance Rth(ch-C) 83.3 2.4 °C/W °C/W Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Mounted on a glass epoxy b...