FDS8449_F085

FDS8449_F085 40V N-Channel PowerTrench®MOSFET July 2009 FDS8449_F085 40V N-Channel PowerTrench® MOSFET General Description These N-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Application Inverter Power Supplies Features 7.6 A, 40V RDS(on) = 29mΩ @ VGS = 10V RDS(on) = 36mΩ @ VGS = 4.5V High power handling capability in a widely used surface mount package RoHS compliant Qualified to AEC Q101 DD DD DD DD SO-8 Pin 1 SO-8 SS SS SS GG 54 63 72 81 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) (Note 1) Package Marking and Ordering Information Device Marking FDS8449 Device FDS8449_F085 Reel Size 13’’ Ratings 40 ±20 7.6 50 2.5 1 –55 to +150 50 125 25 Tape width 12mm Units V V A W °C °C/W Quantity 2500 units ©2009 Fairchild Semiconductor Corporation FDS8449_F085 Rev. A 1 www.fairchildsemi.com FDS8449_F085 40V N-Channel PowerTrench®MOSFET Electrical Characteristics Symbol...