FDD1600N10ALZD

FDD1600N10ALZD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) November 2013 FDD1600N10ALZD BoostPak (N-Channel PowerTrench® MOSFET + Diode) 100 V, 6.8 A, 160 mΩ Features RDS(on) = 124 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A RDS(on) = 175 mΩ (Typ.) @ VGS = 5.0 V, ID = 2.1 A Low Gate Charge (Typ. 2.78 nC) Low Crss (Typ. 2.04 pF) Fast Switching 100% Avalanche Tested Improved dv/dt Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance. Applications LED Monitor Backlight LED TV Backlight LED Lighting Consumer Appliances, DC-DC converter (Step up & Step down) 3 12 45 3 TO252-5L 1. Gate 2. Source 3. Drain / Anode 4. Cathode 5. Cathode 1 Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD IF IFM TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC Diode Continuous Forward Current (TC = 124oC) Diode Maximum Forward Current (Note 3) Operating and Storage Temperature Range Maximum Lead Temperature for So...