FQU4N50TU_WS

FQU4N50TU_WS — N-Channel QFET® MOSFET FQU4N50TU_WS N-Channel QFET® MOSFET 500 V, 2.6 A, 2.7 Ω November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features 2.6 A, 500 V, RDS(on) = 2.7 Ω (Max.) @ VGS = 10 V, ID = 1.3 A Low Gate Charge (Typ. 10 nC) Low Crss (Typ. 6.0 pF) 100% Avalanche Tested D GDS I-PAK Absolute Maximum Ratings TC = 25oC unless otherwise noted.  *
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