N-Channel PowerTrench MOSFET
FDMS8820 N-Channel PowerTrench® MOSFET
FDMS8820
N-Channel PowerTrench® MOSFET
30 V, 160 A, 2.0 mΩ
Features
Max rDS(on...
Description
FDMS8820 N-Channel PowerTrench® MOSFET
FDMS8820
N-Channel PowerTrench® MOSFET
30 V, 160 A, 2.0 mΩ
Features
Max rDS(on) = 2.0 mΩ at VGS = 10 V, ID = 28 A Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
May 2015
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Applications
VRM Vcore Switching For Desktop And Server OringFET / Load Switching DC-DC Conversion
Pin 1
Top
Bottom
Pin 1
S S S G
Power 56
D D DD
S S S G
D D D D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Continuous -Pulsed
TC = 25 °C TC = 100 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4) (Note 6) (Note 6) (Note 1a) (Note 5) (Note 3)
(Note 1a)
Ratings 30 ±20 160 101 28 634 294 78 2.5
-55 to +15...
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