Silicon N-Channel MOSFET
RJK03M6DNS
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive...
Description
RJK03M6DNS
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 7.6 m typ. (at VGS = 10 V) Pb-free Halogen-free
Outline
RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8)
5 6 78
Preliminary Datasheet
R07DS0771EJ0110 Rev.1.10
May 29, 2012
5 678 D DDD
4 321
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S SS 1 23
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50 3. Tc = 25C
Symbol
VDSS
VGSS
ID ID(pulse)Note1
IDR IAP Note 2 EAS Note 2 Pch Note3 ch-c Note3
Tch
Tstg
Ratings 30 ±20 16 64 16 8.5 7.2 12.5 10.0 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
C/W C C
R07DS0771EJ0110 Rev.1.10 May 29, 2012
Page 1 of 6
RJK03M6DNS
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay t...
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